Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T12:45:06Z No. of bitstreams: 1 Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach.pdf: 817739 bytes, checksum: 816d1e16ed36bee969a4897ac984b2c6 (MD5)

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T12:45:06Z No. of bitstreams: 1 Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach.pdf: 817739 bytes, checksum: 816d1e16ed36bee969a4897ac984b2c6 (MD5)

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