Anti Human Immunodeficiency Virus-1 (HIV-1) Agents 1. Discovery of Benzyl Phenyl Ethers as New HIV-1 Inhibitors in Vitro

Ten single benzyl phenyl ethers were synthesized and evaluated as human immunodeficiency virus-1 (HIV-1) inhibitors in vitro for the first time. Among these compounds, especially 4-nitrobenzyl phenyl ether (3h) exhibited the highest anti-HIV-1 activity wi

Anti Human Immunodeficiency Virus Type 1 (HIV-1) Agents 4. Discovery of 5,5 '-(p-Phenylenebisazo)-8-hydroxyquinoline Sulfonates as New HIV-1 Inhibitors in Vitro

To search for compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, ten 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline sulfonates (4a-j) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro for the first time. Some compounds demonstrated anti-HIV-1 activity, especially 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-ethylbenzenesulfonate (4g) and 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-chlorobenzenesulfonate (41) showed the more potent anti-HIV-1 activity with 50% effective concentration (EC50) values of 2.59 and 4.01 mu g/ml, and therapeutic index (TI) values of 31.77 and 24.51, respectively.

Anti HIV-1 agents 5: Synthesis and anti-HIV-1 activity of some N-arylsulfonyl-3-acetylindoles in vitro

In continuation of our program aimed at the discovery and development of compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, 21N-arylsulfonyl-3-acetylindole analogs (2a-u) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro. Among of all the analogs, several compounds exhibited significant anti-HIV-1 activity, especially N-phenylsulfonyl-3-acetyl-6-methylindole (2j) and N-(p-ethyl)phenylsulfonyl-3-acetyl-6-methylindole (2n) showed the most potent anti-HIV-1 activity with EC50 values of 0.36 and 0.13 mu g/mL, and TI values of >555.55 and 791.85, respectively. It demonstrated that introduction of the acetyl group at the 3-position of N-arylsulfonyl-6-methylindoles could generally lead to the more potent analogs. (C) 2010 Elsevier Ltd. All rights reserved.

Effects of adrenergic agents on the expression of zebrafish (Danio rerio) vitellogenin Ao1

Teleost vitellogenins (VTGs) are large multidomain apolipoproteins, traditionally considered to be estrogen-responsive precursors of the major egg yolk proteins, expressed and synthesized mainly in hepatic tissue. The inducibility of VTGs has made them one of the most frequently used in vivo and in vitro biomarkers of exposure to estrogen-active substances. A significant level of zebrafish vtgAo1, a major estrogen responsive form, has been unexpectedly found in heart tissue in our present studies. Our studies on zebrafish cardiomyopathy, caused by adrenergic agonist treatment, suggest a similar protective function of the cardiac expressed vtgAo1. We hypothesize that its function is to unload surplus intracellular lipids in cardiomyocytes for "reverse triglyceride transportation" similar to that found in lipid transport proteins in mammals. Our results also demonstrated that zebrafish vtgAo1 mRNA expression in heart can be suppressed by both (x-adrenergic agonist, phenylephrine (PE) and beta-adrenergic agonist, isoproterenol (ISO). Furthermore, the strong stimulation of zebrafish vtgAo1 expression in plasma induced by the beta-adrenergic antagonist, MOXIsylyl, was detected by Enzyme-Linked ImmunoSorbent Assay (ELISA). Such stimulation cannot be suppressed by taMOXIfen, an antagonist to estrogen receptors. Thus, Our present data indicate that the production of teleost VTG in vivo can be regulated not only by estrogenic agents, but by adrenergic signals as well. (c) 2009 Elsevier Inc. All rights reserved.

Deletion of yeast CWP genes enhances cell permeability to genotoxic agents

We have previously reported the development of a novel genotoxic testing system based on the transcriptional response of the yeast RNR3-lacZ reporter gene to DNA damage. This system appears to be more sensitive than other similar tests in microorganisms, and is comparable with the Ames test. In an effort to further enhance detection sensitivity, we examined the effects of altering major cell wall components on cell permeability and subsequent RNR3-lacZ sensitivity to genotoxic agents. Although inactivation of single CWP genes encoding cell wall mannoproteins had little effect, the simultaneous inactivation of both CWP1 and CWP2 had profound effects on the cell wall structure and permeability. Consequently, the RNR3-lacZ detection sensitivity is markedly enhanced, especially to high molecular weight compounds such as 4-nitroquinoline-N-oxide (> sevenfold) and phleomycin (> 13-fold). In contrast, deletion of genes encoding representative membrane components or membrane transporters had minor effects on cell permeability. We conclude that the yeast cell wall mannoproteins constitute the major barrier to environmental genotoxic agents and that their removal will significantly enhance the sensitivity of RNR-lacZ as well as other yeast-based genotoxic tests.

Effects of cell-cycle arrest agents on cleavage and development of loach (Misgurnus anguillicaudatus) embryos

The aim of this study was to determine the lowest concentration of nocodazole and colchicine to arrest blastomere division during the cleavage stage of loach embryos and to assess the reversibility and toxicity of the treatments in the treated embryos. Eight-cell loach embryos were incubated for 4, 8, 12, or 16 h in 1/10x Holtfreter supplemented with either nocodazole, an inhibitor of tubulin polymerization, or colchicine, an inhibitor of tubulin assembly. Complete arrest of cell cycle was observed, at a colchicine concentration of 0.996 mM and at a nocodazole concentration of 0.275 muM, respectively (the lowest effective concentration). No major morphological alteration in chromatin was observed. Reversibility and toxicity of both agents were dose and exposure period dependent. For both agents, prolonging cleavage arrest for more than 4 h (at the effective concentrations) is detrimental to development of embryos. Nocodazole treatment was less cytotoxic, whereas the concentrations of colchicine which induce cleavage arrest were detrimental to development beyond the blastula stage. Toxic effects beyond the blastula stage could be minimized for both agents by reducing the period of treatment and concentration.

Mechanical and chemical bonding properties of ground state BeH2

The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process

Surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. In this study, InP wafers are divided into four groups and treated by different chemical processes. Subsequently, the characteristics of the treated InP surfaces are carefully studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurements. The optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. This optimization is later evaluated by a scanning electronic microscope (SEM), and the ridge waveguide 1.55 mu m Si-based InP/InGaAsP multi-quantum-well laser chips are also fabricated. (c) 2005 Elsevier B.V. All rights reserved.

Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques

A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.

Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate

We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.

Elastic deformation of wafer surfaces in bonding

A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04219-5].

Modeling the dynamics of Si wafer bonding during annealing

The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (C) 2000 American Institute of Physics. [S0021-8979(00)05520-1].