Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

用PLD法在MgO（100）衬底十生长ZnO薄膜的结构和光学特性

用脉冲激光沉积法在MgO（100）衬底上沉积了ZnO薄膜．衬底温度分别为400℃、550℃和700℃．利用X射线衍射（XRD）和光致发光谱（PL）对薄膜的结构和光学性能进行研究．x射线衍射的结果表明，在400℃和550℃下生长的ZnO薄膜具有高度c一轴择优取向．仉足当衬底温度升高到700℃时，薄膜由单一的择优取向变为有两个较强的择优取向．通过光致发光谱可以发现，在550℃下生长的ZnO薄膜具有强的紫外发射和窄的FWHM，并且紫外发光峰的强度与ZnO薄膜的结晶质量密切相关．

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

东灵山森林生态系统若干水分问题的研究

东灵山地区年均降水量659.7mm，单次降水以雨量小、雨强低的降水为主。水汽压（年均17.7mb）、相对湿度（年均66％）的季节变化呈现生长季高、冬季低的趋势。年均蒸发量1019.5mm;气温、风速、日照时间和水压与月蒸发量和日蒸量相关显著;气温、日照时间和水压分别在11-6月、7－8月和9－10月为决定蒸发量的首要因子。枯枝落叶层、土壤层湿度主要受前十日降水量和坡向影响。 植物体含水量生长季节较高，冬季较低;含水量随径级的增大而降低。六个灌木树种的平均含水量大小顺序为：毛榛（48.62%）最高荆条（36.32%）最低;七个乔木树种水分含量为油松，56.14%;蒙椴，54.19%;华北落叶松，52.91%;五角枫，43.64%;辽东栎，41.87%;棘皮桦，41.13%;大叶白腊，37.79%。几种植被类型的储水量为：辽东栎林，82.08mm;华北落叶松林，47.35mm;混交林，34.60mm;油松林，31.33mm;灌丛，12.40mm。各树种叶片日最低水势的季节均值为：辽东栎，-16.1bar;五角枫，-15.8bar;大叶白腊，-15.1bar;糠椴，-13.4bar;棘皮桦，-12.3bar;蒙椴，-12.2bar。叶片水势的日间变化均呈一“V”形曲线;光照在叶片水势的日间变化中起着决定性作用。 96年各树种平均单株树干茎流量为辽东栎，30.3mm(4.19%);华北落叶松，16.1mm(2.22%);油松，8.9mm(1.23%);棘皮桦，2.9mm(0.40%)。两个生长季各林分冠层的水量平衡为：辽东栎林，树干流茎量101.87mm(9.18%)，穿透降水量823.08mm(74.15%)，截留量185.05mm(16.67%);华北落叶松林，树干径流量66.88mm(6.03%)，穿透降水量836.92mm(75.40%)，截留量206.20mm(18.58);混交林，树干径流量50.13(4.52%)，穿透降水量846.78mm(76.29%)，截留量212.20mm(19.12%);油松林，树干径流量33.90mm(3.05%)，穿透降水量934.88mm(84.22%)，截留量141.22mm(12.72%)。多元回归分析表明，树干流茎量S与降水量P和前24小时降水量P_1呈显著正相关关系;穿透降水量T与降水量P和最大雨强M正相关显著。附加截留量与降水时间成正比。 枯枝落叶层的生物量为：油松林，25.56t/hm~2;华北落叶松林20.01t/hm~2;辽东栎林，8.31t/hm~2;混交林，7.98t/hm~2。枯枝落叶层的平均实际持水量和有效持水量均以油松林最大，其次是华北落叶松林，而混交林和辽东栎林较低;枯枝落叶层的实际持水量和有效持水量的季节变化分别与前十日降水量P10成正相关和负相关关系。枯枝落叶层的截留量为油松林＞华北落叶松林＞辽东栎林＞混交林;油松林（145.632mm和90.800mm）混交林(61.816mm和54.504mm)。油松林、辽东栎林、混交林和华北落叶松林去除枯枝落叶层后，土壤入渗量比对照平均降低100mm以上;表层土壤含水量分别比对照土壤下降了6.26、18.26、15.06和15.07个百分点。地表径流量分别增加了，辽东栎林34.299mm(603%)和15.816mm(525%);油松林14.593mm(732%)和10.584mm(1321%);混交林12.004mm(181%)和7.275mm(364%);华北落叶松林3.555mm(118%)，3.275mm(229%)。96年生长季，各土壤流失量分别增加了：油松林172.751t/hm~2(124倍);辽东栎林836.500t/hm~2(119倍);混交林172.499t/hm~2(47倍);华北落叶松林11.557t/hm~2(11倍)。表层土壤容重分别增加了：油松林15.0%和20.6%，辽东栎林18.4%和28.2%，混交林11.5%和38.5%，华北落叶松林4.3%和17.1%。 0-60cm深度土壤容重平均值的大小顺序为：草地>灌丛>辽东栎林>油松林>混交林>华北落叶松林;而土壤孔隙度的大小顺序为华北落叶松林>混交林>油松林>辽东栎林>灌丛>草地。两个生长季为土壤实际储水量的均值：油松林，124.45mm，78.62mm;辽东栎林，131.23mm，87.72mm;混交林，180.41mm，113.90mm;华北落叶松林，165.53mm，127.95mm;灌丛，172.50mm，89.81mm;草地，152.92mm，89.59 mm分别比干旱年份97年高出45.83mm、43.51mm、51.63mm、37.58mm、82.69mm和63.33mm。两个生长季的地表径流量为草地，30.930mm(2.79%);灌丛，16.321mm(147%);油松林，2.911mm(0.26%);辽东栎林，8.703mm(0.78%);混交林，8.625mm(0.78%);华北落叶松林，4.447mm(0.40%)。油松林、混交林和华北落叶松林地表径流量与降水量P(mm)和最大雨强(mm/h)正相关显著;而辽东栎林、灌丛和草地的地表径流量则与降水量P(mm)、平均雨强Q(mm/hr)和最大雨强M(mm/hr)三者之间呈显著正相关关系。与草地相比(1220.093kg/hm~2，100％)，灌丛、辽东栎林、混交林、油松林和华北落叶松林96年生长季的土壤流失量分别降低了85.05%、94.26%、96.99%、98.86和99.14%。 降水量是影响小流域径流量时间变化的主要因素;南沟和马牙石沟96年的径流量分别是97年的8.19倍和7.87倍，而径流深(46.25mm，52.75mm)分别比97年(5.65mm,6.70mm)高出40.60mm和46.05mm。两个小流域由于面积的差异而使南沟两年的径流量分别比马牙石沟高出2773.136m~3(13.15%)和235.434m~3(8.79%)。96年和97年马牙石沟径流深比南沟高出6.5mm(14.05%)和1.05mm(18.58%)。在地处大陆性季风气候区的东灵山地区，用0.010m~3/min/km~2/hr能较好地分割小流域的洪峰和基流。在五次暴雨水文曲线中，马牙石沟的快速径流量分别比南沟高出25.00%到143.33%。五次洪水水文响应R的平均值南沟为0.218%，马牙石沟为0.404%;与海洋性气候地区相比，东灵山地区小流域的R值要低一到两个数量级。马牙石沟洪峰流量Qp的平均值为418.772L/min要比南沟(281.191L/min)大48.9%。东灵山地区小流域的洪水径流过程可分为三种类型。

咪唑安定或丙泊酚拮抗戊四氮对突触传递的影响

目的: 观察咪唑安定或丙泊酚复合戊四氮对突触传递的影响。方法: 分离大鼠海马半脑, 切出400 Lm 厚度的海马脑片, 全细胞膜片钳记录戊四氮+ 咪唑安定组, 戊四氮+ 脂肪乳剂组, 戊四氮+ 丙泊酚组海马CA 1 区神经元兴奋性突触后电流(EP2 SC) 变化。结果: 各组加入10 mmolöL 戊四氮均使EPSC 降至基线值的3510% 左右; 10 LmolöL 咪唑安定使EPSC 幅值上升至 基线值的8612% , 脂肪乳剂不改变EPSC, 100 LmolöL 丙泊酚使EPSC 值上升至基线值的7117%。结论: 戊四氮对正常突触传 递具有抑制作用, 咪唑安定或丙泊酚拮抗戊四氮抑制突触传递的作用, 使已减小的EPSC 有所升高。

偏镓砷(100)衬底双模尺寸分布铟砷量子点及制作方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)