Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition
Data(s) |
2009
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Resumo |
Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved. National Natural Science Foundation of China [60676004]; Shanghai Science Program [06dz11402]; High Technology Research and Development of China [2006AA03A101, 2006AA03A103] |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Lin Hui;周圣明;Huang Taohua;Teng Hao;Liu Xuedong;Gu Shulin;Zhu Shunming;Xie Zili;Han Ping;Zhang Rong.,J. Alloy. Compd.,2009,467(1-2):L8-L10 |
Palavras-Chave | #Semiconductors #X-ray diffraction #Anisotropy |
Tipo |
期刊论文 |