Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition


Autoria(s): Lin Hui; 周圣明; Huang Taohua; Teng Hao; Liu Xuedong; Gu Shulin; Zhu Shunming; Xie Zili; Han Ping; Zhang Rong
Data(s)

2009

Resumo

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

National Natural Science Foundation of China [60676004]; Shanghai Science Program [06dz11402]; High Technology Research and Development of China [2006AA03A101, 2006AA03A103]

Identificador

http://ir.siom.ac.cn/handle/181231/6195

http://www.irgrid.ac.cn/handle/1471x/12572

Idioma(s)

英语

Fonte

Lin Hui;周圣明;Huang Taohua;Teng Hao;Liu Xuedong;Gu Shulin;Zhu Shunming;Xie Zili;Han Ping;Zhang Rong.,J. Alloy. Compd.,2009,467(1-2):L8-L10

Palavras-Chave #Semiconductors #X-ray diffraction #Anisotropy
Tipo

期刊论文