Deposition of ZnO thin films on (100) γ-LiAlO2 substrate


Autoria(s): Jun Zou; Shengming Zhou; Xia Zhang; Fenglian Su; Xiaomin Li; 徐军
Data(s)

2005

Resumo

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

Identificador

http://ir.siom.ac.cn/handle/181231/5771

http://www.irgrid.ac.cn/handle/1471x/12359

Idioma(s)

英语

Fonte

Jun Zou;Shengming Zhou;Xia Zhang;Fenglian Su;Xiaomin Li;徐军.,Chin. Opt. Lett.,2005,3(9):494-496

Palavras-Chave #光学材料;晶体 #250.0250 #optoelectronics #thin films #040.6070 #solid state
Tipo

期刊论文