偏镓砷(100)衬底双模尺寸分布铟砷量子点及制作方法


Autoria(s): 梁松; 朱洪亮
Data(s)

02/05/2007

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3685

http://www.irgrid.ac.cn/handle/1471x/61324

Idioma(s)

中文

Fonte

梁松;朱洪亮,偏镓砷(100)衬底双模尺寸分布铟砷量子点及制作方法 ,200510086730,20051027

Tipo

专利