Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques

A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.

Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate

We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.

Elastic deformation of wafer surfaces in bonding

A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04219-5].

Modeling the dynamics of Si wafer bonding during annealing

The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (C) 2000 American Institute of Physics. [S0021-8979(00)05520-1].

Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

mobile agent system model based on servlet technology

A mobile agent system model based on the servlet technology is presented, the constitution and working process of the system are analyzed. The implementation of key parts of this model and the current development situation as well as the development trend of mobile agent technology are introduced. The mobile agent system model enhances its internal structure recognition and facilitates the system expansion and reformation. The remotely mobile agent control method by means of the protocol modification is presented.

一种基于Agent的自适应的分布式入侵检测系统

针对传统分布式入侵检测系统组件之间依赖程度大、系统不够健壮且入侵检测系统自身结构固定不能适应入侵的变化的问题,提出了一种基于Agent的自适应的分布式入侵检测系统(简称AAA-DIDS)·AAADIDS采用Agent概念重新构造系统的组件,改进了分布式入侵检测系统由于高层节点单一无冗余而产生的可靠性差的缺陷,从构造上克服了分布式入侵检测系统的脆弱性·同时,AAADIDS系统采用智能技术构建了自适应的入侵检测系统模型,增加了系统应对入侵行为变化的智能性·AAA-DIDS系统相对于传统的分布式入侵检测系统有效地提高了系统自身的可靠性和针对外界变化的适应能力·

一种用于软件过程建模的适应性Agent协商

大多软件过程模型是预定义的.在变化的应用环境中,需要由相应人员进行适应性调整.提出一种用于软件过程建模的适应性多边协商模型——AMNM-PA,其采用Agent封装软件过程中所涉及的个体,包含组织、团队、个人等,通过Agent间的协商动态、适应地建立针对给定软件项目的软件过程模型.AMNM-PA基于非静态有限阶段Markov决策过程,采用模型无关的Q学习算法选取协商策略,因此能够支持动态、非预知环境下的适应性协商,从而满足软件过程建模对环境的适应性需求.AMNM-PA已经实施于软件过程管理系统——SoftPM.

一种基于Agent的自适应软件过程模型

传统的软件过程模型大多是静态的、机械的、被动的,它们要求软件工程人员在描述软件过程时预期所有可能发生的情况,并且显式地定义这些问题的解决方案.当软件过程所处的环境发生变化时,软件过程无法自适应地对这些变更作出相应的调整.提出了一种基于Agent的自适应软件过程模型.在这种软件过程模型中,软件过程被描述为一组相互独立而对等的实体——软件过程Agent.这些软件过程Agent能够对软件过程环境的变化主动地、自治地作出反应,动态地确定和变更其行为以实现软件开发的目标.

基于Agent的智能交通体系及仿真

交通问题已成为全世界所共同关注的主要问题 ,如何运用现代的科技手段来缓解日益严峻的交通压力 ,是目前研究的重点。该文基于目前交通问题及交通系统发展的现状 ,结合计算机软件技术的最新成果———Agent技术 ,提出了基于Agent技术的智能交通控制的体系结构 ,论述了该结构的优点 ;并根据Agent的特点 ,介绍了运用Agent技术进行交通仿真的优势 ,探讨了具体采用Agent技术进行交通仿真的方法。

一种基于移动Agent的复合Web服务容错模型

现有的Web服务容错侧重于通过扩展Web服务标准来提供容错能力.由于Web服务标准体系本身不断发展变化,并且标准之间的兼容性问题依然存在,使得这些研究成果的可实施性较弱.文章提出一种基于移动Agent的复合Web服务容错模型--MAFTM模型,从系统层次而非标准层次来解决复合Web服务的容错问题.首先说明基于移动Agent的工作流与复合Web服务的关系.在此基础上,给出MAFTM模型,包括故障类型、复制机制、"exactly once"语义和一致性算法,并证明MAFTM模型的正确性.

智能交通仿真与车辆Agent决策策略的研究

文章介绍了Agent技术及特点,根据Agent的原理及其仿真的优势,着重叙述了Agent技术在交通仿真中的应用,详细探讨了基于Agent的智能仿真系统中车辆Agent的决策特点及模糊决策方法,同时,还分析了驾驶员因素对驾驶行为的影响。

a flexible negotiation model for an agent-based software process modelling

Our Agent-based Software Process Modelling (ASPM) approach describes a software process as a set of cooperative agents. Negotiation is the way in which the agents construct their cooperative relations, and thus the software process. Currently, most negotiation models use a fixed negotiation protocol and fixed strategies. In order to achieve the flexibility that the negotiation of the agents in ASPM requires, we propose a negotiation model NM-PA. NM-PA mainly includes a generic negotiation protocol and some rules, which possibly change in different negotiation processes. By changing the rules, the model can support multi-protocols and multi-decision-making strategies at a lower cost.