Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator

Modes in equilateral triangle resonator (ETR) are analyzed and classified according to the irreducible representations of the point group C-3v., Both the analytical method based on the far field emission and the numerical method by FDTD technique are used to calculate the quality factors (Q-factors) of the doubly degenerate states in ETR. Results obtained from the two methods are in reasonable agreement. Considering the different symmetry properties of the doubly degenerate eigenstates, we also discuss the ETR joined with an output waveguide at one of the vertices by FDTD technique and the Pade approximation. The variation of Q-factors versus width of output waveguide is analyzed. The numerical results show that doubly degenerate eigenstates of TM0.36 and TM0.38 whose wavelengths are around 1.5 mu m in the resonator with side-length of 5 mu m have the Q-factors larger than 1000 when the width of the output waveguide is smaller than 0.4 mu m. When the width of the output waveguide is set to 0.3 mu m, the symmetrical states that are more efficiently coupled to output waveguide have Q-factors about 8000, which are over 3 times larger than those of asymmetric state.

Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases

Tin disulfide (SnS2) nanocrystalline/amorphous blended phases were synthesized by mild chemical reaction. Both X-ray diffraction and transmission electron microscopy measurements demonstrate that the as-synthesized particles presented very small size, with a diameter of only a few nanometers. The photoluminescence (PL) spectrum suggests efficient splitting of photo-generated excitons in poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) and SnS2 hybrid films. Organic/inorganic hybrid solar cells comprising MDMO-PPV and SnS2 were prepared, giving photovoltage, photocurrent, fill factor and efficiency values of 0.702 V, 0.549 mA/cm(2), 0.385 and 0.148%, respectively, which suggests that this phase-blended inorganic semiconductor can also serve as a promising solar energy material. (C) 2009 Elsevier Ltd. All rights reserved.

High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization.

子午岭辽东栎天然林土壤种子库研究

结合野外调查与室内试验对子午岭辽东栎天然林的种群生长状况,枯落层种子库,不同坡位土壤种子库物种组成、数量特征、生活型及其与地上植被的相似性进行了较为系统的研究。结果表明:(1)试验萌发鉴定出的幼苗共有24种,隶属于16科,其中多年生草本和落叶灌木物种比例最高,分别占种子库物种总数的58.33%和12.5%;(2)整个子午岭天然辽东栎林土壤种子库总密度为12 761.44粒/m2,种子主要分布在枯枝落叶层和0-2.5 cm土层中,其中,辽东栎种子密度为752.5粒/m2,占整个样地土壤种子库总密度的5.89%,表明辽东栎种子萌发能力很差,该林分群落天然更新缓慢。(3)子午岭天然辽东栎林的下坡位物种多样性指数较其它坡位高,但各个样地物种多样性指数均高于对照;(4)天然辽东栎纯林的种群生长状况良好,树龄均为成年树种;(5)方差分析表明:辽东栎的胸径、地径在不同坡位之间均具有显著性差异(P>0.05);(6)相关分析表明:枯枝落叶层厚度,重量与土壤种子库密度之间具无显著相关性(P<0.05)。

迷宫流道转角对灌水器水力性能的影响

为研究齿形、梯形以及矩形流道转角变化对水力性能的影响,采用Fluent软件对不同形状下不同转角的流道进行了数值模拟。研究结果表明:当其他条件相同时,转角的变化与流量系数、流态指数呈负相关,其变化对梯形流道灌水器的流量系数影响最大,最多下降了19.03%,齿形流道次之,下降了10.14%,矩形流道是梯形流道转角角度增加的延伸,具有相同的水力性能变化规律;随着角度的增加,梯形流道总的局部水头损失系数最多增加了32.5%,而齿形流道总的局部水头损失系数最多增加了23.4%,变化都很明显;压力较高时,摩阻系数基本保持不变,流体为紊流状态。

黄土丘陵沟壑区退耕地土壤种子库对植被恢复的影响

为了探讨土壤种子库对植被恢复的影响,该文在野外调查和室内试验的基础上,采用典范变量分析,研究了黄土丘陵沟壑区退耕地土壤种子库密度、土壤水分和养分、地形因子以及退耕年限对植物群落变化的影响,量化了土壤种子库对植被恢复的贡献。结果表明:影响植物群落变化的因子有土壤水分、速效磷、土壤种子库和坡向;仅用土壤种子库只可解释植物群落变化的32.1%;由于退耕地土壤种子库的优势种主要为猪毛蒿,其植被恢复潜力与速度比较小。黄土丘陵沟壑区退耕地植被恢复需要适度的人为干预,有必要适当引进一些演替后期物种,如白羊草、铁杆蒿、长芒草等物种,以缩短演替时间,加速退耕地植被恢复进程,促进黄土丘陵沟壑区水土流失的防治。

Quantum interference effect in GaAs/AlGaAs double quantum wells

Quantum interference properties of GaAs/AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K. For two types of samples used in our experiments, two GaAs quantum wells with the same width of 60 Angstrom are separated by an AlGaAs barrier layer of 120 Angstrom and 20 degrees thick, respectively. The channels with the length of 2 mu m are defined by alloyed ohmic contacts. The conductance oscillation as a function of the magnetic flux Phi(= B/s) was observed and oscillation period is approximately equal to h/e. The results are in agreement with the theoretical expectation of the Aharonov-Bohm effect. Conductance oscillations are apparent slightly in the samples with a thinner AlGaAs barrier.

Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix

We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS

Growth interruption-induced microroughness is studied by photoluminescence (PL) of single quantum wells with different well widths and interruption times. Analysis of the peak splitting in the PL spectra shows that the adjacent peak splittings correspond to well width differences smaller than one monolayer. The number of split peaks increases with increasing well width, saturating when the well width exceeds 11 monolayers. This trend correlates well with the decrease in the lateral dimension of the exciton, which corresponds roughly to the minimum optically sampled area of the interface. For a given quantum well, a plot of the normalized integrated intensities of the split PL peaks versus the well width fluctuation is well described by a Gaussian distribution with an average fluctuation smaller than one monolayer. These results are consistent with the microroughness model.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network

　

Design of spectrometer based on volume phase grating for near infrared range

In order to design and fabricate a spectrometer for the infrared range widely used in the different applications, Volume Phase Grating (VPG) with. low Polarization Dependence Loss (PDL) and high efficiency has been adopted as the dispersion element. VPG is constructed by coating an optical substrate with a thin film of dichromated. gelatin and exposing the film to two mutually coherent laser beams to form index modulation. The diffraction efficiency for a VPG is governed by Bragg effects. The depth (d) and index modulation contrast of the grating structure control the efficiency at which the light is diffracted when the Bragg condition is satisfied. Gradient index lens with high performance and low aberration are used as collimating system instead of standard lens. The spot diagrams and MTF curve of the collimating lens are shown in the paper. The receive system is InCaAs photodiode (PD) array including 512 pixels with 25 mum pitch. The spectrum resolution of the spectrometer reaches to 0.2nm and wavelength accuracy is 40pm.