High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature
| Data(s) |
2010
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| Resumo |
This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-18T13:54:57Z No. of bitstreams: 1 High resistance AlGaAsGaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-18T13:56:14Z (GMT) No. of bitstreams: 1 High resistance AlGaAsGaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (MD5) Made available in DSpace on 2010-07-18T13:56:14Z (GMT). No. of bitstreams: 1 High resistance AlGaAsGaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.pdf: 512386 bytes, checksum: 0a4525ae10f4688f35f22f6a0db96fca (MD5) Previous issue date: 2010 Liu, JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn 其它 Liu, JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu JQ (Liu Junqi), Kong N (Kong Ning), Li L (Li Lu), Liu FQ (Liu Fengqi), Wang LJ (Wang Lijun), Chen JY (Chen Jianyan), Wang ZG (Wang Zhanguo).High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2010,25(7):Art. No. 075011 |
| Palavras-Chave | #半导体材料 #WELL INFRARED PHOTODETECTORS |
| Tipo |
期刊论文 |
