Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

于2010-11-17批量导入

zhangdi于2010-11-17 14:17:02导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-17T06:17:02Z (GMT). No. of bitstreams: 1 7070.pdf: 372988 bytes, checksum: 7c639c357c7bc3f3e1a89a8e330f82d7 (MD5) Previous issue date: 1996

ACAD SINICA,INST SEMICOND,NATL LAB SUPERLATTICES MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA