397 resultados para 345.056


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This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.

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多级调度应该保证事务历史可串行化,满足多级安全特性,不会引入隐通道,并保证高级别事务不会因为无限等待而"饿死".与其他多级数据管理系统调度机制相比,多级多版本时戳调度机制满足上述要求,但该机制存在两个问题,一是事务可能读旧版本,二是要求调度器是可信进程.提出一种多级多版本全局时戳调度机制(MLS_MVGTO),以及依据事务快照生成其全局时戳的基本步骤.给出了预知只读事务信息时的两种改进方法.MLS_MVGTO机制生成的事务历史可串行化,不引入隐通道等,并且该方法避免引入一个全局可信的调度器,并通过对只读事务的深入分析,允许事务读新版本.

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零知识集是一种新的具有零知识性质的集合.这种集合的构造使得证明者对于任意元素都可以给出一个证明,证明该元素属于这个集合或者不属于这个集合,同时不泄漏额外的信息.本文基于Pedersen承诺设计一种新的群组密钥分配方案,利用零知识集的性质实现密钥分配.协议不仅保证了组成员可以安全动态的获得组密钥,而且保证了组成员除了获取组密钥,不会得到群组中其它成员的相关信息.与先前工作相比,本文提出的方案提供了更高的安全特性,适合应用于一些较特殊的网络应用,如网络秘密会议.

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作者分析和讨论了汽水混合物由水下引进时的穿泡过程,比较了两种平均截面容积含汽率的计算方法,整理出容易计算的实际液位计算公式。实际液位与重量液位的差值取决于上锅筒蒸发量和工作压力。在中低压范围,蒸发量一定时,适当提高工作压力可以增加实际重力分离高度,从而提高自然分离效果。在某些情况下,最高液位与平均液位之差别是不容忽视的。

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The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier is proposed in this article. By arranging the clapboard in the bed, the gasifier is thus divided into two regions, which are characterized by different fluidization velocities. The bed structure is designed so that it can guide the circulating flow passing through the two regions, and therefore the feedstock particles entrained in the flow experience longer residence time. The experimental results based on the present new design, operating in the temperature range of 790 degrees C-850 degrees C, indicate that the gas yield is from 1.6-1.9 Nm(3)/kg feedstock, the gas enthalpies are 5,345 kJ/Nm(3) for wood chip and 4,875 kJ/m(3) for rice husk, and a gasification efficiency up to 75% can be obtained.

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本论文“碱性染料砷钼杂多酸多元络合物显色反应的研究及其在光度分析中的应用”包括相互独立的两部分。I.在聚乙烯醇存在下,乙基紫-砷钼杂多酸缔合物分光光度法测定痕量砷的研究本文对乙基紫(EV)等8种碱染料和聚乙烯醇(PVA)等4种分散剂进行了筛选,详细地研究了在PVA存在下,乙基紫-砷钼杂多酸的显色反应的分光光度条件,用三种方法测定了缔合物的组成,建立了一种新的测砷方法,并对水样和Na_2SO_4等样品中微量砷进行了测定。结果表明,在PVA存在下,EV-AsM。杂多酸显色反应的最佳光度测定条件为:[H_2SO_4]=0.056 N,[MoO_4~-]=4.0*10~(-4)M, [EV]=8.0*10~(-5)M, 1% PVA 5ml/25ml,50℃水浴加热10分钟左右。在此最佳光度条件下,缔合物稳定性可达4小时以上,缔合物最大吸收波长为550nm,0-6μg As~(+5)/25ml符合比尔定律。表观摩尔吸光系数ε=2.3*10~5在目前所发表的水相光度法测定微量砷的文献报导中,本法灵敏度最高。缔合物中,EV与砷钼杂多酸之比为3:1。测定样品时,回收率为98~102%,检测下限为2ppb(水样50ml),40ppb(Na_2SO_4, 10g)。方法灵敏度较高且操作步骤亦较简便、快速。II.乙基罗丹明B-砷钼杂多酸多元络合物显色反应的光光度研究本文研究了在PVA存在下,乙基罗丹阴B(ERhB)-砷,钼杂多酸络合物显色反应的分光光度条件,缔合物组成,可见红外光谱及反应历程。结果表明,在PVA存在下,ERhB-AsM。杂多酸显色反应的最佳光度测定条件为:[H_2SO_4]=0.68V, [MoO_4~2]=3.44*10~(-2)M, [ERhB]=3.79*10~(-5)M,1% PVA 5ml/25ml。在此条件下,本显色反应不需水浴加热,显色速度极快,显色液可稳定2小时,缔合物最大吸收波长为589nm,试剂空白最大吸收波长为557nm,0~5μg As~(+5)/25ml符合比尔定律,表观摩尔吸光系数ε=3.0*10~5。在测定砷所有水相光度法中本法灵敏度最高。缔合物中ERhB与砷钼杂多酸之比为3:1,ERhB与砷钼杂多酸是离子键缔合在一起的,ERhB在缔合物中结构并没有由于成络作用而发生变化。

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I LnCl_3-LiCl-THF配合物的研究深入地研究了氯化稀土和氯化锂于四氢呋喃溶液中,以不同的摩尔比,在不同条件下的反应。实验结果表明,反应速度随着稀土元素原子半径的减小,LiCl/LnCl_3摩尔比的增大,以及四氢呋喃用量的增加而加快。通过紫外质谱元素分析和X-射线单晶结构分析等证明,随着不同的LiCl/LnCl_3摩尔比和结晶条件的不同,可以得到不同组成的LnCl_3-LiCl-TNF配合物。对(LaCl)(THF)_2(μ_2-Cl)_4[Li(THF)_2]_2和(LaCl)DME(μ_3-Cl)(μ_2-Cl)_5(La·DME)Li(THF)_2晶体的结构分析表明,前者为单斜晶系,P21/C空间群。a=10.542(4), b=32.236(4), c=11.182(6)A °; β=113.50(3) °, V=3484.97 A °~3. Z=4, R=0.0471;后者为三斜晶系,PT空间群,晶胞参数是:a=11.123(3), b=16.564(5), c=8.653(3)A °;α=95.16(3), β=95.63(3), γ=74.71(3) °;V=1527.0A °~3。Z=2,R=0.0303。实验结果还表明,μ_2-和μ_3-氯桥键是LnCl_3-LiCl-THF类配合物中最基本、最重要的配位键,这种键是通过多重键的方式起着稳定分子结构的作用。当进行与有机配体的交换反应时,由于它们的特殊稳定性,能起到阻止轻稀土有机配合物歧化反应的作用。II环戊二烯基轻镧系氯化物的合成及其稳定性的研究对(G_5H_5)_3Ln·THF和LnCl_3·3LiCl-THF (Ln=La, Nd)溶液反应的研究表明,由于μ_2-氯桥键的作用,轻稀土环戊二烯基化合物中环戊二烯基的再分配反应,在0℃或室温下都能迅速进行。通过两者不同的摩尔比反应,经元素分析、红外光谱、~1H NMR和质谱鉴定,方便地合成了C_5H_5 LnCl_2·2LiCl·5THF和(C_5H_5)_2LnCl.LiCl·nTHF (Ln=La, Nd)等配合物。这一结果表明(C_5H_5)_2LnCl.LiCl·nTHF配合物不仅能稳定地存在于THF溶液中,而且能在一定条件下析出结晶。对(C_5H_5)_2LaCl.LiCl·4THF的晶体结构测定表明,该晶体属于正交晶系,Pc2m空间群。a=12.306(4), b=23.056(6), c=26.701(11)A°; V=7575.81A°~3;而(C_5H_5)_2LaCl·LiCl(DME)_2THF晶体则属于六方晶系,a=12.967(4), b=12.967(4), c=24.108(10)A°;V=3510 A°~3。通过(G_5H_5)_3Ln·THF与LnCl_3·3THF (Ln=La, Nd)的反应进一步研究了轻稀土环戊二烯基氯化物的稳定性。经元素分析,红外光谱和晶体结构分析表明合成了[(η~5-C_5H_5)_4La_3Cl_5·3THF]_2·9THF和(C_5H_5)_2 NdCl·THF配合物,前者属于三斜晶系,P1空间群。a=11.690(3), b=11.750(5), c=18.433(6)A°; α=98.75(3), β=95.62(3), γ=118.92(2)°; V=2147.06 A°~3. Z=1, R=0.099。对环戊二烯基轻稀土氯化物的稳定性进行了较详细地讨论。结果表明,THF的用量和化合物的溶解度是影响产物组成的决定因素。当THF的量不足以溶解所生成的产物时,就会歧化成溶解度最大((C_5H_5)_3Ln·THF)和最小(LnCl_3·nTHF)的两种组分。反之,环戊二烯基轻稀土化合物(Ln=La, Nd)中环戊二烯基的再分配反应就能顺利进行。经元素分析和结构测定,在((C_5H_5)_3Nd·THF)和NdCl_3·LiCl-THF溶液的反应体系中,偶然分离得到了[(η~5-C_5H_5)_4Nd_4(μ_4-o)(μ_2-Cl)_8] [Li(DMP)_2THF]_2这一不合常规的化合物,其晶体属于正交晶系,Pna2,空间群a=19.010(7), b=23.231(6), c=14.180(4); V=6261.91 A°~3。Z=4, R=0.054。说明在一定条件下,μ-氧桥键也起到了稳定分子结构的作用。推测了各类环戊二烯基轻稀土氯化物在THF中的合成反应机理,在LiCl存在的反应体系中Ln cl cl Li桥键能与环戊二烯基发生交换反应;在(C_5H_5)_3Ln·THF和LnCl_3·3THF的反应体系中,首先存在着LnCl_3分子之间的互相作用,因而易于形成双核或多核配合物。这类配合物以晶体形式析出时,易于发生结构上的变化,即化合物的结晶形态与溶液中的形态不一定相同。探索了环戊二烯基烯丙基稀土化合物新的合成方法。找到了真空加热脱水制备氯化稀土的最佳条件,其产物纯度在97%以上。通过加入Co_3O_4/Wo_3催化助燃剂的方法,提高了测定稀土有机化合物中碳含量的准确性。

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利用近50年来西沙、南沙海域SST及全球温度资料,分析西沙、南沙海域SST的

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In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.

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We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.

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计算了GaN二维光子晶体的能带结构,并利用常规工艺在国内首次制备出了GaN基二维平板结构的光子晶体蓝光LED。经过器件测试表明,与没有制作光子晶体的器件相比,光子晶体使器件的有效出光效率达到了原来的1.5倍以上。另外,还对感应耦合等离子体刻蚀(ICP)的制备光子晶体LED的刻蚀工艺进行了分析。

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采用射频磁控溅射技术和热退火处理制备了纳米Si镶嵌SiO2薄膜,在室温下观察到光致发光现象,峰值分别位于360,430和835nm,结合吸收谱、光致发光激发谱和X射线衍射分析讨论了发光机理.利用纳米Si镶嵌SiO2薄膜的非线性光学特性可作为可饱和吸收体,在Nd