Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations
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2010
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Resumo |
In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-27T06:06:37Z No. of bitstreams: 1 Electronic structure and magnetic coupling properties of Gd-doped AlN:first-principles calculations.pdf: 259678 bytes, checksum: aea67ed66bcc17ea811ab826943fc15e (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-27T06:25:30Z (GMT) No. of bitstreams: 1 Electronic structure and magnetic coupling properties of Gd-doped AlN:first-principles calculations.pdf: 259678 bytes, checksum: aea67ed66bcc17ea811ab826943fc15e (MD5) Made available in DSpace on 2010-11-27T06:25:30Z (GMT). No. of bitstreams: 1 Electronic structure and magnetic coupling properties of Gd-doped AlN:first-principles calculations.pdf: 259678 bytes, checksum: aea67ed66bcc17ea811ab826943fc15e (MD5) Previous issue date: 2010 The work is supported by the National Natural Science Foundation of China under Grant No. 60521001, and also by the Foundation of the Chinese Academy of Science. 国内 The work is supported by the National Natural Science Foundation of China under Grant No. 60521001, and also by the Foundation of the Chinese Academy of Science. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang YJ (Zhang Y. J.), Shi HL (Shi H. -L.), Wang SX (Wang S. X.), Zhang P (Zhang P.), Li RW (Li R. W.).Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations.EUROPEAN PHYSICAL JOURNAL B,2010,77(3):345-349 |
Palavras-Chave | #半导体物理 |
Tipo |
期刊论文 |