Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots

Strong temperature dependence of optical properties has been studied in visible InAlAs/AlGaAs quantum dots, by employing photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The fast redshift of the exciton emission peak was observed at much lower temperature range compared to that observed in the InAs/GaAs QDs. In TRPL we did not observe the constant decay time even at low temperature. Instead, the observed decay time increases quickly with increasing temperature, showing 2D properties in the transient dynamic process. We attributed our results to the strong lateral coupling effect, which results in the formation of the local minibands or extended states from the discrete energy levels. (C) 2000 Elsevier Science B.V. All rights reserved.

Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

The photoluminescence of self-assembled multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot (QD) was measured at various temperatures. Strong photoluminescence of wetting layer (WL) and quantum dots were observed at the same time. Furthermore, direct excitons thermal transfer process between the wetting layer and quantum dots was observed. In the study of temperature dependence of PL intensity it was found that the PL peak of wetting layer contains two quenching processes: at low temperature, excitons are thermally activated from localized states to extended two-dimensional states and then trapped by QDs; at high temperature excitons quench through the X valley of barriers. Using rate equation excitons thermal transfer and quenching processes were analyzed quantitatively.

Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 lase

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz. (C) 2008 Elsevier GmbH. All rights reserved.

Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of LTMBE GaAs. Annealing at above 300 degrees C, the arsenic interstitial couples decomposed, and As precipitates formed, resulting in a decrease in the lattice parameter.

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.

The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

青杨组(Populus section Tacamahaca Spach)不同种对增强UV-B的反应差异

人类向大气中排放的大量氮氧化合物和氟氯烃类化合物(CFC’s)引起臭氧分子的分解，导致到达地球表面的紫外辐射增加，特别是UV-B辐射增强。本项目以青杨组杨树为模式植物，从形态和生理方面研究了来自不同UV-B背景下的康定杨与青杨在增强UV-B下的反应及其反应差异,并探讨了干旱、施肥对它们抗UV-B能力的影响。杨树具有分布广、适应性强、在生态环境治理和解决木材短缺方面均占有重要位置，研究成果可为生态系统的恢复与重建提供理论依据和科学指导。主要研究结果有以下： 1. 在温室中经过增强UV-B处理，杨树的外部形态及生理活动受到了一定程度的影响。增强UV-B导致康定杨、青杨的生物量、叶面积及节间长度降低，叶片增厚，SOD活性升高，膜伤害增加，而对叶片数目、R/S、叶绿素A、叶绿素B及整个叶绿素含量没有影响。两种杨树对UV-B胁迫的响应存在差异：在增强UV-B条件下，青杨的植株高度、生物量、叶面积、脯氨酸含量、长期用水效率受到的影响大于康定杨，相比而言，康定杨在比叶面积、叶片厚度、可溶性糖含量、UV-B吸收物质的含量及SOD和GPX活性方面增加的程度大于青杨。这些区别说明，来自于高海拔的康定杨比来自于低海拔的青杨对增强UV-B 具有更强的耐性。我们认为二者在叶片厚度、比叶面积、UV-B吸收物质含量及SOD、GPX活性差异是导致对增强UV-B耐性不同的原因。 2. 干旱与增强UV-B对杨树的生长和生理特性均产生了影响，而且两种胁迫共同作用时干旱表现减弱或加剧了UV-B对杨树某些形态和生理特性的影响。 据试验结果，干旱显著地降低了杨树的株高、叶片数目、叶面积，增加了叶片厚度，促进ABA的积累，提高了CAT活性。对于干旱，两种杨树之间也表现出了一定的差异性。可溶性蛋白质和脯氨酸在青杨叶片中得到显著积累，而在康定杨中没有变化。此外，CAT、长期用水效率在康定杨中受到的影响更加明显。长期用水效率的不同变化趋势说明两种杨树对水分胁迫采用了不同的用水策略，康定杨采用的是节水用水策略，提高用水效率，而青杨采用的是耗水的用水策略。根据干旱对叶面积、脯氨酸、ABA含量、CAT活性及长期用水效率等方面的影响，我们认为来自高海拔地区的康定杨比来自低海拔的青杨有更大的耐旱性，这是对生长环境长期适应的结果。在高海拔地区，因霜冻常带来土壤水分不可利用，降低了根系对水分的吸收，树木容易受到的生理性干旱。另外，高海拔的地区低的气温使植株对严寒有较强的耐性，减少了水分的需要。 生长于增强UV-B下的康定杨和青杨植株表现为高度降低，叶面积缩小，比叶面积增加；叶片栅栏组织、海绵组织均受到增强UV-B的影响，其厚度的增加导致整个叶片变厚。增强UV-B还显著提高了杨树的APX活性、UV-B吸收物质含量，而对叶片数目、ABA、可溶性蛋白质含量及CAT活性没有产生影响。试验中也观察到了两种杨树对增强UV-B响应的差异：与康定杨相比，在增强UV-B下青杨株高、叶面积降低的程度更大一些，SOD活性显著提高。另外UV-B吸收物质受到的影响不同。根据这些差别，高海拔的康定杨(3500 m)比来自低海拔的青杨(1500 m)增强UV-B有较强的耐性。 与水分充足情况下UV-B对植株的影响相比，干旱对杨树抗增强UV-B产生了一定的影响，表现为加剧或减弱UV-B对植物的影响，但这种影响与形态、生理指标有关。当干旱与增强UV-B共同作用时，杨树植株的株高、叶面积进一步降低、叶片进一步增厚。就脯氨酸的积累的而言，在没有水分胁迫时，增强UV-B促使它显著增加，而在干旱处理下这种效果变得不明显。干旱对增强UV-B的影响还与杨树的种类有一定的关系。在康定杨中，干旱减弱了增强UV-B对栅栏组织与海绵组织的影响，且在植株高度、叶面积上表现出累加效应，而在CAT上交互作用显著；但在青杨中干旱则加剧增强UV-B对栅栏组织与海绵组织的影响，在植株高度、叶面积及比叶面积上表现出显著的交互作用。据碳同素分析，在水分充足的条件下，无论是康定杨，还是青杨，增强UV-B均导致其长期用水效率的提高，然而当两种胁迫共同作用时，长期用水效率则表现出差异，在青杨中，长期用水效率得到进一步增高，而康定杨中干旱的效应被增强UV-B所减轻。 3. 田间试验表明，杨树的生长、生理特征都受到养分和增强UV-B的影响。施肥对杨树的影响表现为：提高了叶面积、生物量及SOD的活性，降低了抗坏血酸含量。对于施肥作用，两种杨树的反应也有区别：在康定杨中施肥显著增加了的叶片长度、宽度及光合色素的含量，降低了净光合速率、气孔导度及胞间CO2浓度；在青杨中，则SOD、GPX、APX活性表现增加。从试验看出，施肥对来自于高海拔地区的康定杨(3500 m)的影响较大，对来自低海拔的青杨(1500 m)影响较小，这与它们对原产地的生境适应有一定关系。在康定杨生长的高海拔地区，低温度和湿度不能为地上凋落物或土壤中的根分解提供理想的条件，造成当地土壤的低养分状况，所以当肥料施用以后，效果显著。 经过增强UV-B处理，杨树叶片中UV-B吸收物质含量、GPX的活性得到提高，而脯氨酸、丙二醛、可溶性蛋白质、叶绿素及类胡萝卜素含量没有受到影响。对于增强UV-B两种杨树受到的影响也有所不同：在青杨中增强UV-B导致叶面积缩小，生物量、净光合速率降低，APX的活性及长期用水效率的提高，而对康定杨的这些指标没有产生显著影响，相反抗氧化酶的活性明显高于青杨。这些差异性是由于两种杨树对原产地不同UV-B背景的长期适应结果。康定杨长期生长在较高UV-B环境中，对UV-B有较强的耐性。而青杨适应于较低的UV-B环境，对增强UV-B较为敏感。 试验中施肥也影响了植株对增强UV-B的反应，不过这种影响与杨树的种类及测定指标有一定的相关性。例如，在缺肥的情况下，青杨的长期用水效率和康定杨的叶绿素含量都受到增强UV-B的显著影响，而施肥以后这种影响变得不显著。在缺肥的条件下，GPX、APX在青杨中的活性、GPX在康定杨中的活性对增加UV-B反应不敏感；而施肥以后则变化显著，同样胞间CO2浓度在康定杨也有类似的变化。 For past decades, Ultraviolet radiation, especially UV-B reaching the Earth’s surface increased because of depletion of ozone layer resulted from emission of NxO and CFC’s from human activities. In this experiment, different species of Populus section Tacamahaca Spach from different UV-B background were selected as a model plant to assess the effects of enhanced UV-B radiation. Morphological and physiological traits induced by enhanced UV-B were observed and the different responses between P. kangdingensis and P. cathayana were discussed, furthermore the influences of drought and fertilizer on responses induced by enhanced UV-B were studied. Since poplars play an important role in lumber supply, and are important component of ecosystems due to their fast growth and wide adaptation, the study could provide a strong theoretical evidence and scientific direction for the afforestation, and rehabilitation of ecosystem. The results are as follows: 1. The experiment conducted in a greenhouse indicated that morphological and physiological traits of two poplars were affected by enhanced UV-B radiation. Enhanced UV-B radiation not only reduced biomass, leave area and internode length, but also increased leaf thickness and SOD activity as well as MDA concentration and electrolyte rate. However, no significant changes in leaf numbers, root shoot ratio, and total chlorophyll and chlorophyll component were observed. There were different responses to enhanced UV-B radiation between two species. Compared with P. kangdingensis, cuttings of P. cathayana, exhibited lower height increment and smaller leaf area. In addition, there were significant differences in free proline, soluble protein, and UV-B absorbing compounds, and the activity of SOD and GPX, long-term WUE between them. Differences in plant height, biomass, leaf area, free proline concentration, and long-termed WUE showed that P. cathayana were more affected by enhanced UV-B radiation than P. kangdingensis. In contrast, more increase of specific leaf mass, leaf thickness, and soluble sugar, and UV-B absorbing compounds, and activity of SOD and GPX were observed in P. kangdingensis. According to these results, we suggested that P. kangdingensis from high elevation, which adapted to higher UV-B environments, had more tolerance to enhanced UV-B than P. cathayana from low elevation, which adapted to lower UV-B environment. We believe it was the difference of leaf thickness, specific leaf mass, and UV-B absorbing compounds as well as the activity of SOD and GPX resulted in lower adaptation of P. cathayana to enhanced UV-B radiation. 2. Growth and physiological traits of two poplars were affected by both drought and enhanced UV-B radiation. Moreover, it was observed that when two stresses applied together drought could exacerbate UV-B effects or decrease sensitivity to UV-B. In the experiment, drought significantly decreased plant height, leaf numbers, leaf area, and increased leaf thickness, and ABA, and CAT activity of two poplars. There were significant interspecific differences to drought stress. Exposed to drought, soluble protein and proline concentration were increased in P. cathayana but not in P. kangdingensis. However, more changes in CAT and long-term WUE were observed in kangdingensis. Different change in long-term WUE suggests that two poplars adapted different water-use strategies. P. kangdingensis employ a conservative water-use strategy, whereas P. cathayana employ a prodigal water-use strategy. Based on the differences in leaf area, accumulation of free proline and ABA, CAT activity as well as long-term WUE, we believed that P. kangdingensis from high elevation had a greater tolerance to drought than P. cathayana from low elevation，which is the result of adaptation to local environment. In high elevation area, trees are prone to suffer from physiological drought because of un-movable water caused by frost. Besides lower temperature enable the plants had greater adaptability to frost as a results the requirement of water is reduced Enhanced UV-B radiation decreased shoots height, leaf area, and increased specific leaf mass and thickness of palisade and sponge layer as well as APX activity and UV-B absorbing compounds in both species. Whereas, leaf numbers, ABA content, soluble protein and CAT activity showed no differences to enhanced UV-B radiation. Interspecific differences were also observed. Compared with P. kangdingensis, P. cathayana showed lower shoot height and smaller leaf area, higher SOD activity. Besides, variation in UV-B absorbing compounds was found. These differences suggested that P. kangdingensis from high elevation (3500 m) was more tolerant to enhanced UV-B radiation than P. cathayana from low elevation (1500 m). Compared with morphological and physiological changes induced by enhanced UV-B radiation under well-watered conditions, drought exacerbated or decreased these changes. However, these effects vary with parameters measured. When two stresses applied together, shoot height and leaf area further decreased while leaf thickness further increased. Under well-watered conditions, enhanced UV-B radiation significantly increased proline content, but such effect was not observed under drought conditions. The effect of drought on enhanced UV-B radiation was related to species. For example, drought reduced the effects of enhanced UV-B radiation on palisade parenchyma and sponge mesophyll in P. kangdingensis, and additive effects in shoot height and leaf area and interactive effect CAT activity were observed. In contrast, for P. cathayana drought significantly exacerbated the effects of enhanced UV-B radiation on palisade parenchyma and sponge mesophyll; there were noticeable interaction in shoot height, leaf area and specific leaf mass. As far as long-term WUE is concerned, it was increased by enhanced UV-B radiation under well-watered conditions in both species. While different effect was observed between two species in combination of two stresses. Long-term water use efficiency was further increased in P. cathayana whereas the effect was less significant in P. kangdingensis. 3. The field experiment showed that growth and physiological traits of poplars were affected by nutrition and enhanced UV-B radiation. Fertilization significantly increased leaf area, biomass and SOD activity, reduced Ascorbic acid concentration. There was interspecific difference in response to fertilization. For P. kangdingensis, fertilization significantly increased leaf width, leaf length and photosynthetic pigments content while net photosynthetic rate and stomatal conductance, intercellular CO2 concentration were significantly decreased. However, for P. cathayana, these parameters were unaffected except the increase of SOD, GPX and APX activity. From above, it could concluded that P. kangdingensis from high elevation was more affected by fertilization than P. cathayana, This difference was due to adaptation to local environment., The low temperature and moisture where P. kangdingensis was collected can not provided optimum to decompose roots and litter fall as a result the nutrition in soil was poor. Exposed to enhanced UV-B radiation, for both species UV-B absorbing compounds and GPX activity were significantly increased while proline, MDA, soluble protein, chlorophyll, carotenoids were not affected. Different responses were also observed between the two species. Enhanced UV-B radiation caused significant decreases in leaf area, biomass, net photosynthetic rate and increase in APX activity and long-term WUE in P. cathayana but not in P. kangdingensis. In addition, activity in antioxidant enzymes was much higher in P. kangdingensis than in P. cathayana. In the experiment fertilization affected responses of cuttings to enhanced UV-B radiation, but it concern species and parameters measured. Long-term WUE in P. cathayana and chlorophyll in P. kangdingensis were significantly increased by enhanced UV-B radiation under non-fertilization treatments while the increase was not found under fertilization treatment. In contrast, under no fertilization treatment enhanced UV-B radiation did not affected GPX and APX activity in P. cathayana and GPX in P. kangdingensis while significant increase appeared after application of fertilization. Similar effect of enhanced UV-B radiation on intercellular CO2 concentration in P. kangdingensis was observed.