The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
| Data(s) |
2002
|
|---|---|
| Resumo |
Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak. Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:18Z (GMT). No. of bitstreams: 1 2772.pdf: 246171 bytes, checksum: 19e7eae86361ab6a3caf028d5e2590b2 (MD5) Previous issue date: 2002 Res Ctr Julich.; AIXTRON.; Deutsch Forsch Gemeinsch.; European Off Aerosp Res & Dev.; Deutsch Gesell Kristallwachstum & Kristallzucht. Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Res Ctr Julich.; AIXTRON.; Deutsch Forsch Gemeinsch.; European Off Aerosp Res & Dev.; Deutsch Gesell Kristallwachstum & Kristallzucht. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
WILEY-V C H VERLAG GMBH PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY |
| Fonte |
Jiang DS; Liang XG; Sun BQ; Bian L; Li LH; Pan Z; Wu RG .The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells .见：WILEY-V C H VERLAG GMBH .INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS,PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY ,2002,382-385 |
| Palavras-Chave | #半导体物理 #LUMINESCENCE #LOCALIZATION |
| Tipo |
会议论文 |
