Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

Microstructure of GaN buffer layer grown on (111)MgAl2O4 substrate by metalorganic vapor phase epitaxy (MOVPE) was studied by transmission electron microscopy (TEM). It has been observed that the early deposition of GaN buffer layer on the substrate at a relatively low temperature formed a continual island-sublayer (5 nm thick) with hexagonal crystallographic structure, and the subsequent GaN buffer deposition led to crystal columns which are composed of nano-crystal slices with mixed cubic and hexagonal phases. After high-temperature annealing, the crystallinity of nano-crystal slices and island-sublayer in the buffer layer have been improved. The formation of threading dislocations in the GaN him is attributed not only to the lattice mismatch of GaN/MgAl2O4 interface, but also to the stacking mismatches at the crystal column boundaries. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3

It is believed that the highly dislocated region near the GaN/sapphire interface is a degenerate layer. In this paper a direct evidence for such a proposal is presented. By inserting a buried AlxGa1-xN (x > 0.5) isolating layer to separate the interface region from the bulk region, the background electron concentration can be significantly reduced, while care must be taken to guarantee that there is no degrading of Hall mobility when choosing the thickness of the isolating layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction

We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.

A study of indium incorporation in In-rich InGaN grown by MOVPE

InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.

Fe/Cr氧化还原电池的铬负极和Cr(III)氧化过程的研究

氧化还原液流电池是近十几年来发展起来的一种大容量的贮能电池，目前研究比较成熟功率，容量较大的是盐酸体系Fe/Cr氧化还原电池。但是对于该体系的铬负极，仍然存在着氢气的伴随发生和铬盐溶液的时效陈化问题，此外，作为隔膜的离子交换膜也不能满足电池的性能要求。本文用循环伏安法、恒电流法、紫外可见分光光度法、交流阻抗法研究了铬负极的性质和溶液的时效陈化问题；探讨了三价铬离子的电化学还原过程；组装了试验型氯化铵体系的Fe/Cr氧化还原液流电池，测试了电池的性能；为降低隔膜的离子选择性的要求，对Cr(III)/Cr(VI)电对的氧化还原反应进行了探讨。讨论了三价铬离子在银离子存在下氧化成铬酸盐的反应机理。用循环伏安法研究了金、银、铜、石墨等电极材料对Cr(III)/Cr(rIII)电对氧化还原可逆性和析氢速度的影响。金电极能催化Cr(III)/Cr(II)电对的氧化还原反应，在溶液中含有Pb~(2+)离子时，具有较高的氢过电位。银、铜电极在电位扫描过程中不断地进行溶解和沉积，电极性能不稳定，而石墨电极上Cr(III)/Cr(II)电对的可连性较差。因此选择金作工作电极。研究了电解液中加入Pb、In、Tl的作用，结果表明，同时添加Pb-In、Pb-Tl比添加Pb、Tl等单一添加剂更能有效地提高氢过电位。电子探针分析表明，Pb、In、Tl在金基底上是均匀分布的。文献上尚未见到在这一电池体系中应用上述复合添加物的报导。在盐酸溶液中，存在着如下平衡：[Cr(H_2O)_4Cl_2] Cl·2H_2O <-> [Cr(H_2O)_5Cl]Cl_2·H_2O<->[Cr(H_2O)_6]Cl_3利用各级络合物的稳定常数计算了不同浓度的Cr(III)离子溶液中，上述三种络合物的浓度。以循环伏安曲线上Cr(III)的还原峰值电流i_p对Cr(H_2O)_4Cl_2~+和Cr(H_2O)_5Cl~+的浓度和作图，得到通过原点的直线。恒电流法研究发现，电位－时间曲线相继在-550mv·vs·scE和-660mv·vs·scE出现二个电位平阶，其电量比与Cr(H_2O)_4Cl_2~+、Cr(H_2O)_5Cl~2+的浓度比相当。据此认为参加电化学反应的活性离子是Cr(H_2O)_5Cl~(2+)和Cr(H_2O)_4Cl_2~+。利用循环伏安法比较了盐酸、氯化铵、醋酸、醋酸铵作电解液时Cr~(3+)离子的反应活性。盐酸体系中氢气的伴发生极为严重。醋酸、醋酸铵体系析氢电流较小、Cr~(3+)离子的反应活性也不高。相对来说，氯化铵体系对Cr(III)/Cr(II)电对的氧化还原反应有较高的活性，而且氢的析出电流也较小。紫外可见分光光度法对盐酸。氯化铵作电解液时铬络离子稳定性的研究表明，在溶液久置过程中，铬络离子在氯化铵体系中比在盐酸体系中稳定。循环伏安法的研究也符合这一结论。由于氯化铵体系的优点，组装了以氯化铵为电解液的铁铬单体电池。当充、放电电流密度为20mA/cm~2时，库仑效率达99％，瓦时效率在60％以上，电池的开路电压可达1.18V。与以盐酸为电解液的电池相比，具有电池开路电压高、放氢量小库仑效率高等优点。由于溶液的酸度低，也延缓了溶液对电池壳体及其附件的腐蚀。看来，它是一种很有希望的电解液体系。为了降低电池对离子交换膜的离子选择性要求，一种有效的方法是采用全铬电池体系，即正负极活性物质分别为Cr(III)/Cr(VI)和Cr(III)/Cr(II)。本文在Pt、石墨、钛电极上在硫酸溶液中对Cr(III)/Cr(VI)电对的氧化还原过程进行了探讨。循环伏安法表明，Cr(III)的氧化与氧的发生同时进行，加入Pb~(2+), Co~(2+)离子使Cr(III)离子的氧化电位负移。加入Ag~+时，在循环伏安曲线上出现Cr(III)离子的氧化峄。表明Ag~+对Cr(III)的氧化过程有较好的催化作用。在Cr(III)离子浓度0.1m时，峰值电位φ_P与扫描速度的对数logV呈线性关系，2ψ_p/2logv=100mv；峰值电流i_p与扫描速度v成正比。浓度在0.07M以下时，峰电位与扫描速度无关，峰电流与扫描速度平方根成正比，表现为扩散控制的过程。银离子存在下，Pt电极上Cr(III)离子的氧化过程的交流阻抗谱图呈现二个半圆，可以认为电极过程包括中间吸附物的生成。

新银盐光度法测定As(III)、As(II)、一甲基胂酸、二甲基胂酸及其应用

本论文新银盐分光光度法测定As(III)、As(V)、一甲基胂酸二甲基胂酸。包括三部分：（一）文献综述，对分光光度法测定形态砷的文献作了较为全面的评述，而且总结了其它仪器分析方法对形态砷的测定，并做了比较。（二）新银盐分光光度法测定As(III)、As(V)、一甲基胂酸和二甲基胂酸。该方法主要是在两种不同的酸条件下，分别两两发生四种形态的胂的氢化物，在两个不同波长下测量吸收，利用二元线性回归分析。得四种形态砷的含量。第一步在0.5M柠檬酸和柠檬酸钠的缓冲溶液中，用KBH_4还原片还原As(III)。二甲基胂酸为氢化物，用硝酸银一聚乙烯醇－乙醇吸收液吸收。在405nm和420nm波长处测量吸收；第二步在50%酒石酸介质中，用2片KBH_4发生As(V)、一甲基胂酸的氢化物，同上吸收，测量，二元线性回归分析结果，即得四种形态砷的含量。（三）新银盐分光光度法测定As(III)、As(V)、一甲基胂酸和二甲基胂酸－在实际样品中的应用。本文运用该种分析方法测定了水样、尿样、植扬样品和生物样品中形态砷的含量，取得了比较好的结果，回收率达95%以上。

稀土(III)及铜(II)、锌(II)有机磷（膦）酸酯配合物的晶体结构和振动光谱研究

本文包括标题配合物的结构和振动光谱两部分，共涉及了M(DMP)_n {n=2.3, M=2a, Nd, Cu. Zn}, Ln(DPP)_3{2n=2a-2u, Y}和Ln(BBP)_3 {Ln=La-Lu. Y}三类三十四个配合物。在结构方面，首次测定了Zn(DMP)_2和Cu(DMP)_2呈现出链状配位高聚结构，而La(DMP)_3, La(DMP)_3则为平面网状配位高聚结构。在Zn(DMP)_2, La(DMP)_3和Nd(DMP)_3中，配体以对称“O－P－O”桥键与金属原子配位，在相邻金属原子间形成双桥键。在Zn(DMP)_2中，每个Zn原子通过“O－P－O”双桥键与另两个Zn原子连接，Zn原子配位数为4，配位多面体为四面体构型；在La(DMP)_3和Nd(DMP)_3中，每个稀土原子通过“O－P－O”双桥键与另外三个稀土原子相连接，稀土原子的配位数为6，配位多面体LnO_6为八面体构型。在Cu(DMP)_3中， 配体以对称和非对称“O－P－O”桥键两种形式存在，其中非对称配位的配体形成为“Cu-O-P_O-Cu"-Cu，在铜原之间形成了一个单氧桥键。每个Cu原子通过双“O－P－O”桥键以及双单氧原子桥键与另外三个Cu原子相连接，Cu原子配位数为5，配位多面体为四角锥构型。在振动光谱方面，得到了上述配合物较为完整的光谱数据，并对主要光谱带进行了归属，如V_(M-O), V_(PO_2), V_(P-O(c)),VC-O, VP-C及σ_PO_2等。在稀土配合物中，稀土配位键的伸缩振动V_(vn-o)位于250cm~(-1)附近。V_(Cu)和V_(Zn-o)，在Cu(DMP)_2和Zn(DMP)_2中，分别为(412cm~(-1), 370cm~(-1))和(393cm~(-1), 386cm~(-1))。V_(as)PO_2和V_sPO_2，在配合物振动光谱中，分别在1130－1249cm~(-1)区和1084－1156cm~(-1)区。在稀土配合物中，VL_(n-o), V_(as)PO_2频率值，随镧系收缩逐渐递增。在Cu(DMP)_2红外谱中，非对称配体和对称配体的V_(as)PO_2和V_sPO_2, 分别为(1249cm~(-1)，1156cm~(-1))及(1177cm~(-1)，1090cm~(-1))，其劈裂值△V(V_(as)PO_2-V_sPO_2)为93cm~(-1)和87cm~(-1)。通过对配合物的常温和低温红外光谱的比较，确认了La(DMP)3和Nd(DMP)_3的176cm~(-1)、Ln(DPP)_3和Ln(BBP)_3的150cm~(-1)附近吸收为晶格振动。Ln(DPP)_3、Ln(BBP_3)的光谱性质与Ln(DMP)_3相似，我们认为它们之间具有相同的骨架结构－平面网状配位高聚结构。

Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

Selective, peroxidase substrate based "signal-on" colorimetric assay for the detection of chromium (VI)

Due to the potentially adverse effects of the chromium (VI) on the human health and also on the environment, the quantitative determination of Cr(VI) is of particular interest. This work herein reports a facile, selective and rapid colorimetric determination of Cr(VI) based on the peroxidase substrate-2,2'-azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) as the color developing agent. ABTS, which was usually acted as peroxidase substrate for the enzyme linked immunosorbent assay, is used here for the first time to fabricate the "signal-on" colorimetric Assay for Cr(VI).