Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

于2010-11-15批量导入

zhangdi于2010-11-15 17:02:22导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-15T09:02:22Z (GMT). No. of bitstreams: 1 2944.pdf: 328470 bytes, checksum: 88866519c0885858eb998fd825334788 (MD5) Previous issue date: 2000

Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci.

Chinese Acad Sci, Inst Semicond, Inst Semicond Mat Sci, Beijing 100083, Peoples R China

Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci.