A study of indium incorporation in In-rich InGaN grown by MOVPE

InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.

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Made available in DSpace on 2010-04-22T13:39:08Z (GMT). No. of bitstreams: 1 A study of indium incorporation in In-rich InGaN grown by MOVPE.pdf: 513757 bytes, checksum: f9da299fd03c529e1314ef47bfe6ba61 (MD5) Previous issue date: 2010

National Science Foundation of China 60776015 60976008 ；Major State Basic Research Project of China 2006CB604907； 863 High Technology R& D Program of China 2007AA03Z402 2007AA03Z451

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National Science Foundation of China 60776015 60976008 ；Major State Basic Research Project of China 2006CB604907； 863 High Technology R& D Program of China 2007AA03Z402 2007AA03Z451