砂石覆盖厚度和粒径对土壤蒸发的影响

在干旱半干旱地区,砂石覆盖作为一项传统的覆盖技术,可以明显减少土壤蒸发,为作物生长提供良好的水分条件。为研究不同粒径和厚度砂石覆盖对土壤蒸发的影响,进行了室内模拟试验,对3种粒径(2.5~10、10~25和25~40 mm)和2种覆盖厚度(8 cm和14 cm)以及不同粒径砂石配比条件下土壤水分蒸发进行了研究。结果表明,砂石覆盖能有效地抑制土壤蒸发,在土壤含水量较高的阶段,这种抑制作用更加明显。砂石覆盖对土壤蒸发的抑制作用与粒径和覆盖厚度密切相关,在2.5~40 mm粒径范围内,随着砂石粒径的增大,砂石覆盖对蒸发的抑制作用降低,对蒸发过程的影响减弱,覆盖厚度越大,蒸发量越小。有效的砂石配比应选择细砂石处理,不宜过粗。

无压灌溉日光温室番茄作物-皿系数研究

以-25 kPa作为土壤水势临界值,将作物—皿系数(Kcp)设为0.2,0.4,0.6,0.8,1.0,1.2六个处理,研究了不同灌溉水量时的番茄产量、品质和灌溉水利用效率。通过经济效益评价,研究了杨凌地区无压灌溉温室番茄获得最高经济效益时的作物—皿系数。通过张力计读数变化规律,研究了利用张力计测量无压灌溉湿润体内土壤水势的特点。研究结果表明,Kcp为0.2~0.8时,灌溉水量的增加对番茄产量影响不大;Kcp为1.0~1.2时,灌溉水量的增加能显著提高番茄产量和果实大小;Kcp为0.2时的灌溉水量能极显著提高番茄的灌溉水利用效率。在综合考虑了杨凌地区水价、番茄使用目的和市场价格波动规律后,Kcp取值1.2能获得最高的经济效益。作物—皿系数法计算灌溉水量时的滞后性特点和张力计埋设位置,是判断利用张力计监测土壤水势临界值方法有效性的两个重要因素。

黄土高原(土娄)覆盖层与黏化层的土壤水文效应

黄土高原(土娄)土在《中国土壤系统分类(修订方案)》中属土垫旱耕人为土类的相应亚类,其土壤水分状况是诊断表层所属人为表层类堆垫表层(覆盖层)和诊断表下层(黏化层)的重要诊断特征。以土壤持水性能、蒸发性能和水分移动性能为切入点,对(土娄)土覆盖层和黏化层的土壤水文效应进行研究论证,以期对土垫旱耕人为土类及其亚类的诊断层与诊断特征获取更深层的认识。

两种高分子保水材料对盆栽甘蓝影响研究

采用盆栽试验,研究了两种高分子化合物聚丙烯酸钠(sodium polyacrylate,SP)与聚丙烯酰胺(Polyacrylamide,PAM)对甘蓝生长的影响。结果表明:在土壤中施入2/1000的两种高分子材料均能抑制土壤蒸发,砂土、粘土蒸发强度分别较对照降低35.5%、22.8%;甘蓝叶绿素受两种材料的影响不显著,受肥料影响较大;两种高分子材料施入土壤中增加了甘蓝产量、降低了根冠比,地上、地下生物量砂土较对照分别增加了61.1%、16.1%,粘土分别增加了55.2%、28.7%,根冠比砂土较对照平均降低了26.9%,粘土降低16%;PAM与SP使砂土容重较对照降低了13.9%,而粘土仅降低了4.1%;单施高分子处理水分利用效率平均较对照增加59.1%,与肥料混合使用时增加77.1%。总体来看,PAM与SP作用效果相近。

提高人工植被培育中土壤抗旱性的综合措施

干旱条件下培育人工植被,采取适当的抗旱措施是必不可少的,其中作为植物生长发育所需水分、营养的载体,土壤是显著的可调控对象,对其合理处置与抗旱有着密切的关系。以土蓄水、抑制蒸发、改良土壤、培肥地力等有利于对有限水分的利用。提高土壤抗旱性的综合措施包括土壤耕作、土壤培肥、土壤覆盖、防止水分深层渗漏等方面。在气候暖化的背景下,为增强土壤抗旱措施的效果,提高其技术水平,分析了与蓄水、保水、集水以及用水有关的土壤抗旱方式及其特点。在综合述评的基础上,还讨论了土壤抗旱措施的技术应用问题和需要研究的主要方面。

土壤砂砾覆盖对入渗和蒸发影响研究进展

砂砾覆盖能防止土壤表面受到雨滴侵蚀,切断土壤的毛细管作用,从而对土壤入渗和蒸发规律产生影响。介绍了国内外砂砾覆盖对入渗和蒸发规律影响的研究成果,现有研究结果表明,降雨入渗与砾石覆盖度之间既有正相关关系,又有负相关关系,入渗不仅与砂砾粒径有关,还与砂砾在土壤表面所处的位置有关;砂砾覆盖能够抑制蒸发,抑制效果与砂砾粒径大小、颜色和厚度等有关。另外,一些国外学者通过定量化模型描述了砂砾覆盖条件下入渗和蒸发规律,但这些定量化模型还是最基本的简化模型,主要偏重于理论说明,直接应用于实践还存在一些问题。

STUDIES OF THE PROMISING MATERIAL COSI2 ON GAAS SUBSTRATES

The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 angstrom) and Si(1800 angstrom) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 muOMEGA cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750-degrees-C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900-degrees-C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS

Alternating layers of Si(200 angstrom thick) and Ce(200 angstrom thick) up to 26 layers altogether were deposited by electron evaporation under ultrahigh vacuum conditions on Si(100) substrate held at 150-degrees-C. Isothermal, rapid thermal annealing has been used to react these Ce-Si multilayer films. A variety of analytical techniques has been used to study these multilayer films after annealing, and among these are Auger electron spectroscopy, Rutherford backscattering, X-ray diffraction, and high resolution transmission electron microscopy. Intermixing of these thin Ce-Si multilayer films has occurred at temperatures as low as 150-degrees-C for 2 h, when annealed. Increasing the annealing temperature from 150 to 400-degrees-C for 1 h, CeSi2 forms gradually and the completion of reaction occurs at approximately 300-400-degrees-C. During the formation of CeSi2 from 150-400-degrees-C, there is some evidence for small grains in the selected area diffraction patterns, indicating that CeSi2 crystallites were present in some regions. However, we have no conclusive evidence for the formation of epitaxial CeSi2 layers, only polycrystals were formed when reacted in the solid phase even after rapid thermal anneal at 900-degrees-C for 10 s. The formation mechanism has also been discussed in combining the results of the La-Si system.

Lithography-independent and large scale fabrication of a metal electrode nanogap

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demon-strated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography.Then, by depositing conformal SiO_2 on the polysilicon pattern, etching back SiO_2 anisotropically in the perpendic-ular direction and removing the polysilicon with KOH, a sacrificial SiO_2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO_2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO_2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.

Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: H film. Electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/V. Combined with photoconductivity spectra of the composites and pure a-Si: H, we tentatively elucidate the improvement in photoconductivity of the composite film.

1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.