Lithography-independent and large scale fabrication of a metal electrode nanogap
Data(s) |
2009
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Resumo |
A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demon-strated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography.Then, by depositing conformal SiO_2 on the polysilicon pattern, etching back SiO_2 anisotropically in the perpendic-ular direction and removing the polysilicon with KOH, a sacrificial SiO_2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO_2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO_2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production. the National High-Tech Research and Development Program of China |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li Yan;Wang Xiaofeng;Zhang Jiayong;Wang Xiaodong;Fan Zhongchao;Yang Fuhua.Lithography-independent and large scale fabrication of a metal electrode nanogap,半导体学报,2009,30(9):142-145 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |