Comparison of femtosecond and nanosecond laser-induced damage in HfO2 single-layer film and HfO2-SiO2 high reflector

HfO2 single layers, 800 run high-reflective (HR) coating, and 1064 ran HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO2 single layer is higher than the HfO2-SiO2 HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed. (c) 2007 Optical Society of America.

Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved.

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

End-pumped continuous-wave passively modelocked Nd : YVO4 laser with low pump power

A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

Fiber Optic Coupling of CW Linear Laser Diode Array

Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 ptm diameter. The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 fxm aperture spaced on 500 (xm centers. The coupling system contains packaged laser diode bar, fast axis collimator, slow axis collimation array, beam transformation system and focusing system. The high brightness, high power density and single fiber output of a laser diode bar is achieved. The coupling efficiency is 65% and the power density is up to 1.03 * 10~4 W/cm~2.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.

Modified Simplified Rate Equation Model of Flowing Chemical Oxygen-Iodine Laser and its Application

A modified simplified rate equation (RE) model of flowing chemical oxygen-iodine laser (COIL), which is adapted to both the condition of homogeneous broadening and inhomogeneous broadening being of importance and the condition of inhomogeneous broadening being predominant, is presented for performance analyses of a COIL. By using the Voigt profile function and the gain-equal-loss approximation, a gain expression has been deduced from the rate equations of upper and lower level laser species. This gain expression is adapted to the conditions of very low gas pressure up to quite high pressure and can deal with the condition of lasing frequency being not equal to the central one of spectral profile. The expressions of output power and extraction efficiency in a flowing COIL can be obtained by solving the coupling equations of the deduced gain expression and the energy equation which expresses the complete transformation of the energy stored in singlet delta state oxygen into laser energy. By using these expressions, the RotoCOIL experiment is simulated, and obtained results agree well with experiment data. Effects of various adjustable parameters on the performances of COIL are also presented.

Preliminary Investigation of Fluid Flow in Meso-Scale Rectangular Tube

The fluid flow associated with micro and meso scale devices is currently of interest. Experiments were performed to study the fluid flow in meso-scale channels. A straight flow tube was fabricated with 1.0x4.0mm^2 in rectangular cross section and 200mm in length, which was made of quartz for flow visualization and PIV measurements. Reynolds numbers were ranged from 311 to over 3105. The corresponding pressure drop was from 0.65KPa to over 16.58KPa between the inlet and outlet of the tube. The micro PIV was developed to measure the velocity distribution in the tube. A set of microscope object lens was mounted ahead of CCD camera to obtain optimized optical magnification on the CCD chip. The velocity distributions near the outlet of the tube were measured to obtain full-developed flow. A CW laser beam was focused directly on the test section by a cylinder lens to form a small light sheet. Thus, high power density of light was formed on the view region. It is very important to the experiment while the velocity of the flow reaches to a few meters per second within millimeter scale. In this case, it is necessary to reduce exposure time to microseconds for PIV measurements. In the present paper, the experimental results are compared with the classical theories.

YAG激光毛化技术进展

二十世纪八十年代，当比利时冶金研究中心(CRM)开发出CO_2激光毛化冷轧辊技术后，尝试用YAG激光进行轧辊毛化一直吸引着众多的研究者，这是因为YAG(1.06μm)激光波长比CO_2(10.6μm)激光波长短一个量级，材料对YAG激光有更高的吸收率，并用YAG激光可以聚焦到更小的光斑尺寸，同时使用电信号驱动的声光开关技术便于对毛化分布进行可设定控制。但是用传统声光调制的YAG激光虽然可以碇以很高的脉冲频率(>30kHz)，但单脉冲有量仅为10mJ左右，难以达到辊面毛化粗糙度的要求，因此人们认为YAG激光用于毛化的主要困难是脉冲能量太小。

Modified Simplified Rate Equation Model of Flowing Chemical Oxygen-Iodine Laser and its Application

A modified simplified rate equation (RE) model of flowing chemical oxygen-iodine laser (COIL), which is adapted to both the condition of homogeneous broadening and inhomogeneous broadening being of importance and the condition of inhomogeneous broadening being predominant, is presented for performance analyses of a COIL. By using the Voigt profile function and the gain-equal-loss approximation, a gain expression has been deduced from the rate equations of upper and lower level laser species. This gain expression is adapted to the conditions of very low gas pressure up to quite high pressure and can deal with the condition of lasing frequency being not equal to the central one of spectral profile. The expressions of output power and extraction efficiency in a flowing COIL can be obtained by solving the coupling equations of the deduced gain expression and the energy equation which expresses the complete transformation of the energy stored in singlet delta state oxygen into laser energy. By using these expressions, the RotoCOIL experiment is simulated, and obtained results agree well with experiment data. Effects of various adjustable parameters on the performances of COIL are also presented.

Ion cascade acceleration from the interaction of a relativistic femtosecond laser pulse with a narrow thin target

Particle-in-cell simulations are performed to study the acceleration of ions due to the interaction of a relativistic femtosecond laser pulse with a narrow thin target. The numerical results show that ions can be accelerated in a cascade by two electrostatic fields if the width of the target is smaller than the laser beam waist. The first field is formed in front of the target by the central part of the laser beam, which pushes the electron layer inward. The major part of the abaxial laser energy propagates along the edges to the rear side of the target and pulls out some hot electrons from the edges of the target, which form another electrostatic field at the rear side of the target. The ions from the front surface are accelerated stepwise by these two electrostatic fields to high energies at the rear side of the target. The simulations show that the largest ion energy gain for a narrow target is about four times higher than in the case of a wide target. (c) 2006 American Institute of Physics.