Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T13:15:47Z No. of bitstreams: 1 Optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22T13:38:37Z (GMT) No. of bitstreams: 1 Optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (MD5)

Made available in DSpace on 2010-04-22T13:38:37Z (GMT). No. of bitstreams: 1 Optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (MD5) Previous issue date: 2010

National High Technology Research and Development Program of China 2009AA03Z404 2007AA03Z421; National Program on Key Basic Research Project of China 2007CB936304

国际

National High Technology Research and Development Program of China 2009AA03Z404 2007AA03Z421; National Program on Key Basic Research Project of China 2007CB936304