第一性原理研究Mg,Si和Mn共掺GaN

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mg,Si和Mn共掺GaN电子结构和光学性质,分析比较计算结果.计算表明:掺杂后体系均在能隙深处产生自旋极化杂质带,具有半金属性,能产生自旋注入.与Mn掺杂GaN比较,Mg共掺后能使居里温度(TC)升高,并在1.0eV出现源于Mn4+离子基态4T1(F)到4T2(F)态跃迁的较强的光吸收,而Mn掺杂GaN时位于1.3eV处的吸收峰消失;Si共掺后没能使TC升高,且在低能区无光吸收现象.

Zn杂质扩散诱导AlGaInP/GaInP量子阱混杂

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口,提高大功率半导体激光器的输出功率。以Zn_3As_2为扩散源,采用闭管扩散方式,在550℃下对650nm半导体激光器的外延片进行了一系列Zn杂质扩散诱导量子阱混杂的实验。实验发现,随着扩散时间从20～120min,样品光致发光(PL)谱蓝移偏移增加,峰值波长蓝移53nm;当扩散时间超过60min后,样品的PL谱中不仅出现了常见的蓝移峰,同时还出现了红移峰,峰值波长红移32nm。分析表明PL谱蓝移来自Zn扩散引起的AlGaInP/GaInP间的量子阱混杂;红移来自Zn杂质扩散对样品中Ga_(0.51)In_(0.49)P缓冲层的影响。还研究了扩散温度(550℃)和扩散时间对样品晶体品质的影响,并在理论上计算了AlGaInP/GaInP量子阱混杂中的Al-Ga的互扩散系数。

Optical and Electrical Properties of GaN.Mg Grown by MOCVD

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV （BL） and the ultraviolet emission band is around 3.27eV （UVL）. The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Investigation on Fe, Mn, Zn, Cu, Pb and Cd fractions in the natural surface coatings sampled and surficial sediments collected in the Songhua River, China

Natural surface coatings sampled (NSCSs) from the surface of shingles and surficial sediments (SSs) in the Songhua River, China were employed to investigate the similarities and difference in fractions of heavy metals (Fe, Mn, Zn, Cu, Pb, and Cd) between NSCSs and SSs using the modified sequential extraction procedure (MSEP). The results show that the differences between NSCSs and SSs in Fe fractions were insignificant and Fe was dominantly present as residual phase (76.22% for NSCSs and 80.88% for SSs) and Fe-oxides phase (20.33% for NSCSs and 16.15% for SSs). Significant variation of Mn distribution patterns between NSCSs and SSs was observed with Mn in NSCSs mainly present in Mn-oxides phase (48.27%) and that in SSs present as residual phase (45.44%). Zn, Cu, Pb and Cd were found dominantly in residual fractions (>48%), and next in solid oxides/hydroxides for Zn, Pb and Cd and in easily oxidizable solids/compounds form for Cu, respectively. The heavy metal distribution pattern implied that Fe/Mn oxides both in NSCSs and SSs were more important sinks for binding and adsorption of Zn, Pb and Cd than organic matter (OM), and inversely, higher affinity of Cu to OM than Fe/Mn oxides in NSCSs and SSs was obtained. Meanwhile, it was found that the distributions of heavy metals in NSCSs and SSs were similar to each other and the pseudo-total concentrations of Zn, Cu, Pb and Cd in NSCSs were greater than those in SSs, highlighting the more importance for NSCSs than SSs in controlling behaviours of heavy metals in aquatic environments.

MOCVD生长Mg掺杂GaN的退火研究

用MOCVD技术在50mm蓝宝石衬底(0001)面上生长了GaN∶Mg外延膜,对样品进行热退火处理并作了Hall、双晶X射线衍射(DCXRD)和室温光致发光谱(PL)测试.Hall测试结果表明,950℃退火后空穴浓度达到5×1017cm-3以上,电阻率降到2.5Ω·cm;(0002)面DCXRD测试发现样品退火前、后的半峰宽均约为4′;室温PL谱中发光峰位于2.85eV处,退火后峰的强度比退火前增强了8倍以上,表明样品中大量被H钝化的受主Mg原子在退火后被激活.

掺P、B对纳米Zn-O薄膜电学特性的影响

现在普遍采用ITO薄膜(In_2O_3:Sn)作为太阳电池的窗口材料，但由于In资源的稀缺，使太阳能电池的成本增加。Zn-O是一种低成本材料，具有良好的电学、光学特性，因此可代替ITO薄膜作为窗口材料。由于ZnO/n-Si异质结太阳电池的转化效率为6.9%～8.5%，而ITO光电转换效率为12%～15%，采用液态源掺杂方法，取得较好效果，证实了掺P、B对纳米ZnO薄膜提高导电性是有效的。本文利用扫描俄歇探针等手段研究分析了掺P、B随热处理温度的变化对纳米Zn-O薄膜电学特性的影响。在研制过程中，对掺入P、B的纳米Zn薄膜，曾采用X射线衍射议进行分析，其结果未见P、B。

Zn扩散工艺在降低VCSEL p型DBR串联电阻中的应用

于2010-11-23批量导入

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

长期重金属污染胁迫下农田土壤微生物特征研究

本论文以沈阳张士污灌区土壤为例，首次采用传统微生物生态学与现代微生物分子生态学相结合的研究方法系统地研究了污灌区长期重金属污染胁迫下原位农田土壤微生物特征。结果表明，虽然已经停止污灌十多年，张士灌区土壤耕作层（0～30 cm）仍然存在普遍的Cd污染，灌区土壤Cd含量高达1.75～3.89 mg kg-1。部分区域土壤Cd呈现向下迁移的趋势,且同时伴随有Cu、Zn复合污染。灌区土壤Cd含量较高时清水灌溉能降低土壤表层Cd含量，灌区土壤Cd含量下降到一定程度（约2 mg kg-1）后，清水灌溉对消除土壤表层Cd污染的作用消失。重金属元素中Cd对土壤微生物的影响最突出，在三个不同季节中土壤Cd与土壤微生物生物量（MBC）和微生物商（qM）呈显著负相关，与土壤微生物代谢商（qCO2）呈显著正相关。所检测的微生物指标中qM和qCO2与多种重金属元素呈显著相关性，可作为评价一定程度重金属污染的微生物指标。土壤营养元素（除P外）与微生物特征呈显著正相关性，土壤营养元素对微生物的刺激作用有可能在某种程度上掩盖了重金属对土壤微生物的负面影响。 用16S rDNA-PCR-DGGE方法，研究了不同浓度Cd胁迫下土壤Cd抗性细菌群落结构的动态变化，结果表明在Cd的胁迫下Cd抗性细菌多样性显著增加，不同土壤样品中Cd抗性细菌群落结构向相似的方向偏移，群落结构最终将可能趋向一致。Cd胁迫使敏感菌Pontibacter消失，而伯克氏菌（Burkholderia）、罗尔斯通氏菌（Ralstonia）、芽孢杆菌（Bacillus）和节杆菌（Arthrobacter）则富集成为优势菌。 从张士灌区Cd污染土壤中分离出32株Cd抗性细菌，研究了Cd抗性细菌和Cd抗性基因cadA的分布特征。这32株Cd抗性细菌分别归属于拟杆菌门(Bacteroidetes)（37.5%）、变形菌门(Proteobacteria) （37.5%）、放线菌门(Actinobacteria)（9.4%） 和厚壁菌门(Firmicutes)（15.6%）。在液体LB培养基中对Cd的抗性浓度都大于2 mmol L-1，对Zn抗性浓度介于5～13 mmol L-1。首次从Cetobacillus属的Cd抗性菌株S1基因组DNA中扩增出cadA基因的部分片断。在芽孢杆菌属(Bacillus)的4株菌N7，N9，N10和N11的基因组DNA中扩增出cadA基因的部分片断。序列分析结果表明这5株菌的cadA基因序列相似性为99％～93％，它们与坚强芽孢杆菌（Bacillus firmus） cadA 基因序列(M90750）相似性为94％～92％。系统发育分析结果表明这5株菌的cadA都与Bacillus firmus cadA 基因有着较近的亲缘关系。不同属的Cd抗性细菌间cadA基因的高度相似性揭示了cadA基因能在不同种属间转移的特性。

城市污水污泥中重金属减量强化技术研究

污水处理过程中最为棘手的问题是可以产生大量含有重金属等污染物的固态、半固态或液态的污泥。随着工业化和城市化的迅猛发展以及污水处理能力的提高，日益增多的污泥不仅困扰着污水处理厂的正常运作，若处理不当，还会危及到生态健康与人体健康，并造成资源与经济的浪费。污泥中含有丰富的氮、磷、钾等营养元素，这使污泥资源化利用成为可能；但污泥中同时含有大量的重金属元素，给污泥的资源化利用造成了许多麻烦。因此，如何有效地去除污泥中的重金属，使其达到相应的标准之内，是污泥回用前亟待解决的关键问题。本研究主要针对如何减少和降低城市污泥中重金属毒害作用，以有效的、去除和降低城市污泥中有毒有害重金属元素为目的，尤其是一些经常性超标重金属元素，对城市污泥进行重金属脱除开展实验研究。 在实验研究过程中，主要采用柠檬酸、草酸和乙酸这3种最常见的有机酸作为淋洗剂，研究了柠檬酸、草酸和乙酸对污泥中Cd、Pb、Cu和Zn等重金属的去除效果，并分析了实验前后污泥中重金属形态变化和生物有效性，以及处理前后析出液和污泥中硝态氮和铵态氮的浓度变化。 研究结果表明，随着反应时间和酸溶液浓度的增加，污泥中重金属（Cu除外）的去除率也相应增加。污泥中加入有机酸溶液反应24h后，柠檬酸可去除76.0%的Pb和92.5%的Zn，草酸和乙酸对重金属的去除率并不大。柠檬酸经过7h即可去除污泥中大部分的Pb和Zn，分别为52.0%（Pb）和74.2％（Zn）。去除的Pb和Zn主要为以稳定形式存在的，不稳定态的比例有所上升，其中可交换态的浓度有不同程度的增加。污泥经有机酸处理后，有大量的硝态氮和铵态氮溶解于析出液中。与污泥中加入蒸馏水的对照处理相比，有机酸可大幅度增加析出液中铵态氮的含量，减少硝态氮的含量。由于污泥处理过程中有其他形态的氮的转化，处理后污泥中仍含有较高浓度的硝态氮和铵态氮。采用0.5 mol•L-1草酸处理析出液中硝态氮和铵态氮浓度分别为2.8 mg•L-1和888.1 mg•L-1,且重金属去除率不大，析出液可作为较好的“液体肥料”进行回收利用。