Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

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This work was supported by the National Natural Sciences Foundation of China under Grant No. 60806001, the National High Technology Program of China under Grant No. 2009AA03A198, and the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No. ISCAS2008T03.

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This work was supported by the National Natural Sciences Foundation of China under Grant No. 60806001, the National High Technology Program of China under Grant No. 2009AA03A198, and the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No. ISCAS2008T03.