高激光损伤阈值溶胶-凝胶ZrO2薄膜

采用醇热法水解氧氯化锆（ZrOCl2·8H2O）制备ZrO2溶胶，提拉法涂膜。采用粘度、粒度分布、折射率、IR、DSC、AFM等测试手段对溶胶和薄膜性能进行表征。结果表明，ZrO2溶胶颗粒的平均粒径为18．9nm，薄膜经300℃热处理后折射率可高达1．95，膜层表面均匀平整，表面平均粗糙度仅为0．561nm，膜层的激光损伤阈值为14J／cm^2（1064nm，1ns）。

甲基化对多孔SiO_2增透薄膜光学稳定性能的影响

分别通过引入甲基三乙氧基硅烷(MTES)、二甲基二乙氧基硅烷(DMDES)以及六甲基二硅氮烷(HMDS)组分对SiO2悬胶体进行改性,得到不同甲基化的多孔SiO2改性薄膜。研究了改性薄膜的光学稳定性,抗激光破坏性能以及机械抗擦性能。结果表明,HMDS改性薄膜的光学稳定性最好而机械抗擦性较弱,MTES与DMDES改性薄膜的光学稳定性较低而机械抗擦性良好且均与改性组分的含量有关,甲基化改性薄膜的抗激光破坏性能比未改性薄膜的有所降低。

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

双源共蒸法制备非均匀膜的模型分析

探讨了双源共蒸法制备非均匀薄膜的堆积模型，并给出了非均匀膜的沉积速率与两种膜料沉积速率的关系．当两种膜料的沉积单分子大小近似相等或者小分子沉积速率远大于大分子时，可以近似认为混合介质膜的沉积速率等于两种膜料的沉积速率之和；当两种膜料的沉积单分子大小不满足近似相等且两种膜料的沉积速率可比较时，非均匀膜的沉积速率不能简单地用两种膜料的沉积速率之和来近似，它将随两种膜料沉积单分子的大小不同和沉积速率比不同按照不同的规律变化，并在文中给出了不同情况下的非均匀膜的沉积速率变化规律。

The study on the interface adhesion comparison of the MgF2, Al2O3, SiO2 and Ag thin films

Adhesion between the interface of pure silver thin film and three kinds of low refractive index coatings MgF2, Al2O3, SiO2 were compared in this article. The results indicated that the adhesion of Al2O3 and Ag was evidently superior to that of MgF2 and Ag, and the adhesion of MgF2 and Ag was evidently superior to that Of SiO2 and Ag. Reasons were analyzed accordingly. On the other hand, we compared the effect on the optical characteristic of Ag film when these three kinds of films were used as protective coatings and enhanced coatings. Considering the difference of the adhesion between Ag and MgF2, Al2O3, SiO2, suited uses are given for each other. © 2004 Elsevier B.V. All rights reserved.

Extended bidirectional reflectance distribution function for polarized light scattering from subsurface defects under a smooth surface

By introducing the scattering probability of a subsurface defect (SSD) and statistical distribution functions of SSD radius, refractive index, and position, we derive an extended bidirectional reflectance distribution function (BRDF) from the Jones scattering matrix. This function is applicable to the calculation for comparison with measurement of polarized light-scattering resulting from a SSD. A numerical calculation of the extended BRDF for the case of p-polarized incident light was performed by means of the Monte Carlo method. Our numerical results indicate that the extended BRDF strongly depends on the light incidence angle, the light scattering angle, and the out-of-plane azimuth angle. We observe a 180 degrees symmetry with respect to the azimuth angle. We further investigate the influence of the SSD density, the substrate refractive index, and the statistical distributions of the SSD radius and refractive index on the extended BRDF. For transparent substrates, we also find the dependence of the extended BRDF on the SSD positions. (c) 2006 Optical Society of America.

Effect of microstructure of TiO2 thin films on optical band gap energy

TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4 eV to 3.21 eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

HfO2 膜料中的杂质对薄膜损伤及性能的影响

By analysis of impurity elements in HfO2 coating material, the influence of main impurity elements on the characteristic of coatings were studied. The results indicate that the metal elements and absorptive dielectric elements damage the HfO2 coatings. The more the Zr element content is, the more the absorption is for the coatings in ultraviolet wave. The negative ion element will become the gas source center and form an ejection in the process of evaporation of coating material, so decrease the damage threshold of the coatings.

斜角入射沉积法制备渐变折射率薄膜的理论探讨

从理论上分析了单一膜料倾斜入射沉积时的折射率与填充密度的关系，给出了三种不同的表达式；然后从正变和负变、完整周期和存在半周期以及不同的周期数等几个方面探讨了膜层的填充密度按照线性变化时的渐变折射率薄膜的光学特性，并将折射率的不同理论表达式对光学特性的影响进行了对比，最后讨论了单一膜料倾斜入射沉积渐变折射率薄膜的方法、填充密度线性变化时的渐变折射率薄膜的应用及制备中需要进一步解决和处理的问题．

磁控反应溅射法制备渐变折射率薄膜的模型分析

阐述了磁控反应溅射法制备渐变折射率薄膜的机理；探讨了磁控反应溅射法制备渐变折射率薄膜的理论模型，给出了渐变折射率薄膜的折射率与反应气体分压的关系，在一定的沉积参数下，由要得到的膜层折射率随膜层几何厚度的变化规律可推导出反应气体分压比随时间的变化规律；最后以制备折射率线性变化的薄膜为例说明了如何推导得到反应气体分压比随时间的变化规律．

共蒸法制备非均匀膜的速率控制分析

渐变折射率薄膜，又称为非均匀膜。利用德鲁德理论分析了混合介质膜的介电常量与各个膜料的介电常量之间的关系，介绍了共蒸法制备非均匀膜的制备机理。对混合膜的沉积速率为两种膜料的沉积速率之和的情况，分别从两种膜料的单分子体积是否相等和总的沉积速率是否为常数两个方面，探讨了双源共蒸法制备的非均匀膜的折射率分布规律与膜料的沉积速率之间的关系，并给出了几种常见的折射率分布如线性变化、正弦变化、指数变化和双曲变化规律的膜料沉积速率表达式。最后以混合介质膜的总沉积速率为常数、折射率按照线性变化为例进行了说明。