The PL "violet shift" of cerium dioxide on silicon

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied front tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed.

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than similar to 60 Angstrom, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Angstrom, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

A面(11-20)ZnO薄膜中杂质的偏振PL谱研究

本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源.低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁.

近空间升华沉积CdTe薄膜的微结构和PL谱

用近空间华法在CdS薄膜上沉积了CdTe薄膜。研究了在两种保护气氛下所沉积的多晶CdTe薄膜在后处理后的微结构、表面形貌及光致发光(PL)谱，并研究了CdTe表面的CdS/CdTe界面的P谱的区别，根据薄膜的微结构对碲化镉在太阳电池中的应用进行了讨论。

CeO_2/Si薄膜PL谱的“紫移”

利用双离子束外延技术制备了CeO_2/Si薄膜，椭圆偏振仪测得薄膜厚度为100nm，折射系数约为2.455。实验中发现未经退火处理的CeO_2室温光致发光(PL)谱存在着“紫移”现象，其移动距离约为65nm。利用XRD和XPS对薄膜结构及价态进行分析后表明，PL谱的移动与氧化物中Ce离子价态有关。当Ce离子价态发生Ce~(4+)→Ce~(3+)变化时，其PL谱峰位要从蓝光区向紫光区移动，出现发光峰“紫峰”现象。

退火对He注入及随后~(208)Pb~(27+)辐照的Al_2O_3单晶PL谱的影响

利用高能离子研究了110keV的He+注入Al2O3单晶及随后230MeV的208Pb27+辐照并在不同温度条件下退火样品的光致发光的特性.从测试结果可以清楚地看到在375nm,390nm,413nm和450nm出现了强烈的发光峰.经过600K退火2h后测试结果显示,390nm发光峰增强剧烈,而别的发光峰显示不明显.在900K退火条件下,390nm的发光峰开始减弱相反在510nm出现了较强的发光峰,到1100K退火完毕后390nm的发光峰完全消失,而510nm的发光峰相对增强.从辐照样品的FTIR谱中看到,波数在460—510cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏.1000—1300cm-1之间为Al-O-Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动.退火后的FTIR谱变化不大.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

High PL-efficiency ZnO nanocrystallites/PPV composite nanofibers

In this paper, we report for the first time on the synthesis of ZnO nanocrystallites in conjugated polymer (PPV) nanofibers by the coupling of the in situ/blend methods and electrospinning. These composite nanofibers were characterized by fluorescence microscopy, atomic force microscope (AFM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra, Fourier transform infrared (FT-IR) spectroscopy, and X-ray powder diffraction (XRD).

High PL quantum efficiency of poly(phenylene vinylene) systems through exciton confinement

Photoluminescence (PL) quantum efficiency is a key issue in designing successful light-emitting polymer systems. Exciton relaxation is strongly affected by exciton quenching at nonradiative trapping centers and the formation of excimers. These factors reduce the PL quantum yield of light-emitting polymers. In this work, we have systematically investigated the effects of exciton confinement on the PL quantum yield of an oligomer, polymer, and alternating block copolymer (ABC) PPV system. Time-resolved and temperature-dependent luminescence studies have been performed. The ABC design effectively confine photoexcitations within the chromophores, preventing exciton migration and excimer formation. An unusually high (PL) quantum yield (above 90%) in the solid state is reported for the alternating block copolymer PPV, as compared to that of similar to 30% of the polymer and oligomer model compounds. (C) 2000 Elsevier Science S.A. All rights reserved.

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

水热法制备ZnO二维周期有序孔结构薄膜

在由溶胶-凝胶法制备的纳米ZnO薄膜衬底上,以Zn(NO_3)_2·6H_2O和六亚甲基四胺(HMT)等摩尔浓度配制成前驱体溶液,在单层聚苯乙烯(PS)微球模板辅助下,采用水热法制备了具有规则多孔结构的ZnO薄膜.探讨了PS微球作为模板对ZnO纳米棒生长的限制作用以及柠檬酸钠在水热制备方法中对晶体生长的影响.利用扫描电子显微镜(SEM)和X射线衍射(XRD)表征了水热反应后所得二维有序ZnO膜表面形貌和取向性,测量了ZnO薄膜的光致发光(PL)光谱并研究其相应机理.

微/纳米氧化锌（ZnO）的生长、性质及其应用研究

纳米氧化锌（ZnO）是一种直接宽带隙半导体材料，室温下其禁带隙宽为本3.37 eV，激子束缚能为60 meV。纳米ZnO有明显的尺寸效应、表面和界面效应等，物理化学性能优越。在压电材料、铁电材料、平面显示、表面声波、传感器、场发射器件、激光、光催化等方面有着广泛的用途。近年来，对纳米ZnO材料的研究成为国内外的一个热点。 本论文研究了用化学气相沉积（CVD）法制备微/纳米ZnO材料。通过控制实验条件，合成了多种特殊结构和形貌的微/纳米ZnO材料，并用扫描电子显微镜（SEM）、高分辨率透射电镜（HR-TEM）、X-射线衍射仪（XRD）、Raman光谱和光致发光（PL）等对材料的结构和光学性能进行了表征。采用CVD法，在温度为630 °C，氧气流量为15 sccm，氩气流量为300 sccm的条件下，制备了一种纳米带冠四足状ZnO（T-ZnO）。此结构ZnO材料的每根足顶端均有一规则的六方帽形结构，具有很大的比表面积。实验结果表明：合成的ZnO材料为纤维锌矿结构单晶，并且沿着(0001)方向生长；室温下的PL谱有两个激发峰，一个是在393 nm处相对较弱的近带紫外峰，另一个是在511 nm处强峰。而材料在600 °C下氧气中退火30 min后，511 nm附近的绿光激发辐射峰则基本消失了，这说明在511 nm处的绿光激发辐射峰可能是由于氧空位引起的。此外，通过改变实验条件，还得到了其他多种结构的微/纳米ZnO材料。 通过大量实验，找到了一种在低温下合成微/纳米ZnO材料的新方法，即水蒸气氧化法。用ZnI2作为锌源，水蒸气作为氧化剂，实验温度在300～500 °C范围内，大大低于通常CVD法的500～1500 °C。采用此法，用硅做基底，得到了一系列有趣的实验结果，大多数情况下ZnO纳米晶自组装成很规则的圆。而在瓷舟中收集到的纳米ZnO跟普通CVD法结果相似，可以得到锥状、棒状等结构的纳米晶，但其生长方式与硅基底上的有很大差别。此外，用水蒸气氧化法，还实现了ZnO纳米晶在碳纳米管（CNTs）上的直接生长，而且其PL性能增强，这可能是纳米ZnO和CNTs相互耦合的结果。在700 °C温度下，以锌粉和ZnI2作为锌源，用水蒸气作为氧化剂，在硅基底的正反面分别得到了纳米棒和纳米推子阵列。此外，还对水蒸气氧化法的化学反应机理进行了分析，实验结果证明：固态ZnI2在受热和一定真空度下先蒸发成ZnI2分子，ZnI2分子遇到水蒸气发生反应生成偶极ZnO分子，这些ZnO偶极分子在硅基底上通过静电力自组装成特殊的几何形状。 此外，还通过分子动力学模拟的方法，对材料的力学性能进行了研究，得到了ZnO的弹性常数和体弹性模量，模拟值跟其他研究人员的实验和模拟结果吻合得很好，并估出算了ZnO晶体的表面能和断裂韧性。 本论文还对制备材料的光催化性能进行了系统的研究，采用CVD法制备ZnO，对铬黑T（EBT）进行光催化降解实验。通过正交实验方法，得到了ZnO催化降解EBT的最佳工艺条件，即催化剂用量为5 g/L，光照强度为120 W，反应温度为20 °C，反应时间为120 min，EBT浓度为10 mg/L，溶液pH值为4。 在最佳实验条件下，20分钟内有95%的EBT被降解完，30分钟内则全部降解。因此，ZnO在EBT的降解中催化效率很高，在废水处理中具有潜在的应用前景。