How to achieve maximum charge carrier loading on heteroatom-substituted graphene nanoribbon edges: density functional theory study

The practical number of charge carriers loaded is crucial to the evaluation of the capacity performance of carbon-based electrodes in service, and cannot be easily addressed experimentally. In this paper, we report a density functional theory study of charge carrier adsorption onto zigzag edge-shaped graphene nanoribbons (ZGNRs), both pristine and incorporating edge substitution with boron, nitrogen or oxygen atoms. All edge substitutions are found to be energetically favorable, especially in oxidized environments. The maximal loading of protons onto the substituted ZGNR edges obeys a rule of [8-n-1], where n is the number of valence electrons of the edge-site atom constituting the adsorption site. Hence, a maximum charge loading is achieved with boron substitution. This result correlates in a transparent manner with the electronic structure characteristics of the edge atom. The boron edge atom, characterized by the most empty p band, facilitates more than the other substitutional cases the accommodation of valence electrons transferred from the ribbon, induced by adsorption of protons. This result not only further confirms the possibility of enhancing charge storage performance of carbon-based electrochemical devices through chemical functionalization but also, more importantly, provides the physical rationale for further design strategies.

First principle studies of zigzag AlN nanoribbon

Ab initio density functional calculations were performed to study the geometry and electronic structure of a prototypical zigzag AlN nanoribbon. We find that H-terminated zigzag 10-AlN nanoribbons have a non-direct band gap and are nonmagnetic. When a transverse electric field is applied, the band gap decreases monotonically with the strength of field E. Zigzag AlN nanoribbons with the N edge unpassivated display strong spin-polarization close to the Fermi level, which will result in spin-anisotropic transport. These results suggest potential applications for the development of AlN nanoribbon-based nanoelectronics applications.

First-principle studies of electronic structure and C-doping effect in boron nitride nanoribbon

Structural and electronic properties have been studied for Boron Nitride nanoribbons (BNNR) with both zigzag and armchair shaped edge (Z-BNNR and A-BNNR) by first-principle spin-polarized total energy calculations. We found that the energy band gap of Z-BNNR is indirect and decreases monotonically with the increasing ribbon width, whereas direct energy band gap oscillation was observed for A-BNNRs. Additionally, C-substitution at either single boron or nitrogen atom site in BNNRs could induce spontaneous magnetization. Our results could be potentially useful to design magnetic nano-devices based on BNNRs.

Negative differential conductance and effective electron mass in highly asymmetric ballistic bilayer graphene nanoribbon

We present a simplified theory of the effective momentum mass (EMM) and ballistic current–voltage relationship in a degenerate two-folded highly asymmetric bilayer graphene nanoribbon. With an increase in the gap, the density-of-states in the lower set of subbands increases more than that of the upper set. This results in a phenomenological population inversion of carriers, which is reflected through a net negative differential conductance (NDC). It is found that with the increase of the ribbon width, the NDC also increases. The population inversion also signatures negative values of EMM above a certain ribbon-width for the lower set of subbands, which increases in a step-like manner with the applied longitudinal static bias. The well-known result for symmetric conditions has been obtained as a special case.

External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon

In this work, using self-consistent tight-binding calculations. for the first time, we show that a direct to indirect band gap transition is possible in an armchair graphene nanoribbon by the application of an external bias along the width of the ribbon, opening up the possibility of new device applications. With the help of the Dirac equation, we qualitatively explain this band gap transition using the asymmetry in the spatial distribution of the perturbation potential produced inside the nanoribbon by the external bias. This is followed by the verification of the band gap trends with a numerical technique using Magnus expansion of matrix exponentials. Finally, we show that the carrier effective masses possess tunable sharp characters in the vicinity of the band gap transition points.

Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon

We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

Quantum capacitance in bilayer graphene nanoribbon

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Huckel method under relaxed and strained conditions. It is demonstrated that the direct BTBT is improbable in relaxed monolayer nanoribbon; however, with the application of certain uniaxial tensile strain, the material becomes favorable for it. On the other hand, the relaxed bilayer nanoribbon is suitable for direct BTBT but becomes unfavorable when the applied uniaxial tensile or compressive strain goes beyond a certain limit. Considering the Wentzel-Kramers-Brillouin approximation, we evaluate the tunneling probability to estimate the tunneling current for a small applied reverse bias. Reasonably high tunneling current in the MoS2 nanoribbons shows that it can take advantage over graphene nanoribbon in future tunnel field-effect transistor applications.

Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor

In this work, we present a study on the negative differential resistance (NDR) behavior and the impact of various deformations (like ripple, twist, wrap) and defects like vacancies and edge roughness on the electronic properties of short-channel MoS2 armchair nanoribbon MOSFETs. The effect of deformation (3 degrees-7 degrees twist or wrap and 0.3-0.7 angstrom ripple amplitude) and defects on a 10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory and the non-equilibrium Green's function approach. We study the channel density of states, transmission spectra, and the I-D-V-D characteristics of such devices under the varying conditions, with focus on the NDR behavior. Our results show significant change in the NDR peak to valley ratio and the NDR window with such minor intrinsic deformations, especially with the ripple. (C) 2013 AIP Publishing LLC.

Performance analysis of boron nitride embedded armchair graphene nanoribbon metal-oxide-semiconductor field effect transistor with Stone Wales defects

We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width similar to 5 nm, the simulated ON current is found to be in the range of 265 mu A-280 mu A with an ON/OFF ratio 7.1 x 10(6)-7.4 x 10(6) for a V-DD = 0.68 V corresponding to 10 nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%. (C) 2014 AIP Publishing LLC.

Performance prediction of graphene nanoribbon and carbon nanotube transistors

Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field-effect transistor (FET) can be the basis for a quasi-one- dimensional (Q1D) transistor technology. Recent experiments show that the on-off ratio for GNR devices can be improved to level exploration of transistor action is justified. Here we use the tight-binding energy dipersion approximation, to assess the performance of semiconducting CNT and GNR is qualitatively in terms of drain current drive strength, bandgap and density of states for a specified device. By reducing the maximum conductance 4e2/h by half, we observed that our model has a particularly good fit with 50 nm channel single walled carbon nanotube (SWCNT) experimental data. Given the same bandgap, CNTs outperform GNRs due to valley degeneracy. Nevertheless, the variation of the device contacts will decide which transistor will exhibit better conductivity and thus higher ON currents. © 2011 American Institute of Physics.

Single-particle probing of edge-state formation in a graphene nanoribbon

We investigate the effect of a perpendicular magnetic field on the single-particle charging spectrum of a graphene quantum dot embedded inline with a nanoribbon. We observe uniform shifts in the single-particle spectrum which coincide with peaks in the magnetoconductance, implicating Landau level condensation and edge state formation as the mechanism underlying magnetic field-enhanced transmission through graphene nanostructures. The experimentally determined ratio of bulk to edge states is supported by single-particle band-structure simulations, while a fourfold beating of the Coulomb blockade transmission amplitude points to many-body interaction effects during Landau level condensation of the ν=0 state. © 2012 American Physical Society.

Graphene nanoribbon blends with P3HT for organic electronics.

In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed N = 18 armchair graphene nanoribbons (GNRs). The latter, prepared by a bottom-up solution synthesis, are expected to form solid aggregates which cannot be easily interfaced with metallic electrodes, limiting charge injection at metal-semiconductor interfaces, and are characterized by a finite size, thus by grain boundaries, which negatively affect the charge transport within the film. Both P3HT and GNRs are soluble/dispersible in organic solvents, enabling the use of a single step co-deposition process. The resulting OFETs show a three-fold increase in the charge carrier mobilities in blend films, when compared to pure P3HT devices. This behavior can be ascribed to GNRs, and aggregates thereof, facilitating the transport of the charges within the conduction channel by connecting the domains of the semiconductor film. The electronic characteristics of the devices such as the Ion/Ioff ratio are not affected by the addition of GNRs at different loads. Studies of the electrical characteristics under illumination for potential use of our blend films as organic phototransistors (OPTs) reveal a tunable photoresponse. Therefore, our strategy offers a new method towards the enhancement of the performance of OFETs, and holds potential for technological applications in (opto)electronics.

sigma- and pi-defects at graphene nanoribbon edges: Building spin filters

The presence of certain kinds of defects at the edges of monohydrogenated zigzag graphene nanoribbons changes dramatically the charge transport properties inducing a spin-polarized conductance. Using an approach based on density functional theory and nonequilibrium Green`s function formalism to calculate the transmittance, we classify the defects in different classes depending on their distinct transport properties: (i) sigma-defects, which do not affect the transmittance close to the Fermi energy (E(F)); and (ii) pi-defects, which cause a spin polarization of the transmittance and that can be further divided into either electron or hole defects if the spin transport polarization results in larger transmittance for the up or down spin channel, respectively.