Quantum capacitance in bilayer graphene nanoribbon


Autoria(s): Bhattacharya, Sitangshu; Mahapatra, Santanu
Data(s)

01/05/2012

Resumo

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/44948/1/phy_low_dim_sys_nan_44-7-8_1127-1131_2012.pdf

Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Quantum capacitance in bilayer graphene nanoribbon. In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 44 (7-8). pp. 1127-1131.

Publicador

ELSEVIER SCIENCE BV

Relação

http://dx.doi.org/10.1016/j.physe.2011.09.033

http://eprints.iisc.ernet.in/44948/

Palavras-Chave #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Tipo

Journal Article

PeerReviewed