Quantum capacitance in bilayer graphene nanoribbon
Data(s) |
01/05/2012
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Resumo |
We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/44948/1/phy_low_dim_sys_nan_44-7-8_1127-1131_2012.pdf Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Quantum capacitance in bilayer graphene nanoribbon. In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 44 (7-8). pp. 1127-1131. |
Publicador |
ELSEVIER SCIENCE BV |
Relação |
http://dx.doi.org/10.1016/j.physe.2011.09.033 http://eprints.iisc.ernet.in/44948/ |
Palavras-Chave | #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology) |
Tipo |
Journal Article PeerReviewed |