Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon


Autoria(s): Bhattacharya, Sitangshu; Mahapatra, Santanu
Data(s)

01/05/2011

Resumo

We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/39745/1/Analytical_Study.pdf

Bhattacharya, Sitangshu and Mahapatra, Santanu (2011) Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon. In: IEEE Transactions on Nanotechnology, 10 (3). pp. 409-416.

Publicador

IEEE

Relação

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5416318&tag=1

http://eprints.iisc.ernet.in/39745/

Palavras-Chave #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Tipo

Journal Article

PeerReviewed