Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

Novel room temperature photoluminescence (PL) of the Ge/Si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface has a strong effect on the PL emission. The peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (C) 2004 Elsevier B.V. All rights reserved.

Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction

The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0(th) peak narrow after annealing.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

We investigated the temperature dependence (10-250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. (C) 2001 American Institute of Physics.

X-ray evidence for Ge/Si(001) island columns in multilayer structure

A Ge/Si(0 0 1) multilayer structure is investigated by cross-sectional transmission electron microscopy, atomic force microscopy and double crystal X-lay diffraction. We find that the multilayer-structure-related satellite peaks in the rocking curve exhibit a similar nonuniform broadening and rye fit the zero-order peak with two Lorentz lineshapes. The ratio of the integrated intensity of two peaks is approximately equal with the anal ratio of the top Ge layer deposited between the areas that are and are not occupied by islands. It proves the existence of vertical-aligned island columns from the viewpoint of macroscopic dimension. (C) 2001 Elsevier Science B.V. All rights reserved.

Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the elastic interaction between islands is responsible for the oblique alignment of stacked islands. (C) 2000 American Institute of Physics. [S0003-6951(00)04644-1].

DCXRD Investigation of a Ge/Si（001） Island Multilayer Structure

A Ge/Si（001） island multilayer structure is investigated by double crystal X-ray diffraction, transmission electron microscopy,and atomic force microscopy. We fit the satellite peaks in the rocking curve by two Lorentz lineshapes, which originate from the wetting layer region and the island region. Then from the ratio of the thick- nesses of the Si and Ge （GeSi） layers as determined by TEM,tbe Ge compositions of the wetting layer and islands are estimated to be about 0. 51 and 0. 67, respectively,according to the positions of the fitted peaks. This proves to be a relatively simple way to investigate the Ge/Si （001） island multilayer structure.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Stability of Mo/Si multilayer structure used in Bragg-Fresnel optics

The thermal and chemical stabilities of Mo/Si multilayer structure used in Bragg-Fresnel optics were studied to get optimal technological parameters of pattern generation. Mo/Si multilayers were annealed at temperature ranging from 360 to 770 K, treated with acetone and 5 parts per thousand NaOH solution, and characterized by small-angle x-ray diffraction technique as well as x-ray photoelectron spectroscopy, and Olympus microscopy.

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x-ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

Elasticity, band structure, and piezoelectricity of BexZn1-xO alloys

Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wideband gap BexZn1-xO ternary alloys are calculatedusing firstprinciples methods. The alloys' lattice constants obey Vegard's law well. As Be concentration increases, the bulk modulus and Young's modulus of the alloys increase, whereas the piezoelectricity decreases. We predict that BexZn1-xO/GaN/substrate (x = 0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. Our calculated results are in good agreement with experimental data and other theoretical calculations. (c) 2008 Elsevier B.V. All rights reserved.

Efficient multilayer white polymer light-emitting diodes with aluminum cathodes

Efficient multilayer white polymer light-emitting diodes (WPLEDs) with aluminum cathodes are fabricated. The multilayer structure is composed of a water soluble hole-injection layer, a toluene-soluble emissive layer, and an alcohol-soluble emissive layer. The polarity difference of the solvents used for spin coating these polymers allows for realization of the multilayer polymer structure. The recombination zone confined at the interface of the two emissive polymers avoids exciton quenching by electrodes, and white emission is realized by harvesting photons emitted from the two emissive polymers. A maximum luminous efficiency of 16.9 cd/A and a power efficiency of 11.1 lm/W are achieved for this WPLED.

Photoacoustic studies on multilayer dielectric coatings

Non-destructive testing d multilayer dielectric coatings (SiO2/TiO2 structure) has been carried out using the photoacoustic technique. This technique makes use d a 10 mW He-Ne laser, a photoacoustic cell and a lock-in amplifier. The chopped He-Ne laser beam is allowed to fall on the sample placed in a photoacoustic cell. The acoustic signals thus generated are detected using a microphone and the resulting output is processed by a lock-in amplifier. The amplitude and phase of the signals were measured as a function of the chopping frequency. Striking step-like variations are observed in me phase against frequency plot which dearly reveals the different layers present in the multilayer structure.

Simulation and analysis of a sub-wavelength grating based multilayer surface plasmon resonance biosensor

This paper presents a subwavelength grating based multilayer surface plasmon resonance biosensor (SPRB) which includes a periodic array of subwavelength grating on top of a layer of graphene sheet in the biosensor. The proposed biosensor is named grating-graphene SPRB (GG-SPRB). The aim of the proposed multilayer structure is to improve the sensitivity of the SPRB through monitoring of the biomolecular interactions of DNA hybridization. Significant sensitivity improvement is obtained for the GG-SPRB compared with the conventional SPRB. The result of the numerical investigation of the GG-SPRB is presented and compared with a theoretically developed multilayer matrix formalism, and a good agreement has been observed. In addition, an optimization of the grating dimensions including volume factor, grating depth, grating angle, grating period, and grating geometry (e.g., rectangular, sinusoidal and triangular) is presented. The outcome of the investigation presented in this paper identifies desired functioning conditions corresponding to the best design parameters for the GG-SPRB.

Interfacial interactions and structure of polyurethane intercalated nanocomposite

Understanding the interfacial interactions between the nanofiller and polymer matrix is important to improve the design and manufacture of polymer nanocomposites. This paper reports a molecular dynamic Study on the interfacial interactions and structure of a clay-based polyurethane intercalated nanocomposite. The results show that the intercalation of surfactant (i.e. dioctadecyldlmethyl ammonium) and polyurethane (PU) into the nanoconfined gallery of clay leads to the multilayer structure for both surfactant and PU, and the absence of phase separation for PU chains. Such structural characteristics are attributed to the result of competitive interactions among the surfactant, PU and the clay surface, including van der Waals, electrostatic and hydrogen bonding.

Reversible and irreversible pH induced conformational changes in self-assembled weak polyelectrolyte multilayers probed using etched fiber Bragg grating sensors

Polyelectrolytes are charged polymer species which electrostatically adsorb onto surfaces in a layer by layer fashion leading to the sequential assembly of multilayer structures. It is known that the morphology of weak polyelectrolyte structures is strongly influenced by environmental variables such as pH. We created a weak polyelectrolyte multilayer structure (similar to 100 nm thick) of cationic polymer poly-allylamine hydrochloride (PAH) and an anionic polymer poly-acrylic acid (PAA) on an etched clad fiber Bragg grating (EFBG) to study the pH induced conformational transitions in the polymer multilayers brought about by the variation in charge density of weak polyelectrolyte groups as a function of pH. The conformational changes of the polyelectrolyte multilayer structure lead to changes in optical density of the adsorbed film which reflects in the shift of the Bragg wavelength from the EFBG. Using the EFBG system we were able to probe reversible and irreversible pH induced transitions in the PAH/PAA weak polyelectrolyte system. (C) 2014 Elsevier B.V. All rights reserved.