X-ray evidence for Ge/Si(001) island columns in multilayer structure


Autoria(s): Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM
Data(s)

2001

Resumo

A Ge/Si(0 0 1) multilayer structure is investigated by cross-sectional transmission electron microscopy, atomic force microscopy and double crystal X-lay diffraction. We find that the multilayer-structure-related satellite peaks in the rocking curve exhibit a similar nonuniform broadening and rye fit the zero-order peak with two Lorentz lineshapes. The ratio of the integrated intensity of two peaks is approximately equal with the anal ratio of the top Ge layer deposited between the areas that are and are not occupied by islands. It proves the existence of vertical-aligned island columns from the viewpoint of macroscopic dimension. (C) 2001 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12274

http://www.irgrid.ac.cn/handle/1471x/65107

Idioma(s)

英语

Fonte

Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM .X-ray evidence for Ge/Si(001) island columns in multilayer structure ,JOURNAL OF CRYSTAL GROWTH,2001 ,223(1-2):99-103

Palavras-Chave #半导体材料 #X-ray diffraction #island columns #vapor phase epitaxy #Ge islands #nanomaterials #GROWTH #GE #SUPERLATTICES #ORGANIZATION #LAYERS #DOTS
Tipo

期刊论文