Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections

We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.

The interaction between atoms of Au and Cu with clean Si(111) surface: A study combining synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations

In order to evaluate the interactions between Au/Cu atoms and clean Si(l 11) surface, we used synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations. Optimized geometries and energies on different adsorption sites indicate that the binding energies at different adsorption sites are high, suggesting a strong interaction between metal atom and silicon surface. The Au atom showed higher interaction than Cu atom. The theoretical and experimental data showed good agreement. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

The interaction between atoms of Au and Cu with clean Si(111) surface: A study combining synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

Coherent X-ray production via pulse reflection from laser-driven dense electron sheets

A scheme to obtain brilliant x-ray sources by coherent reflection of a counter-propagating pulse from laser-driven dense electron sheets is theoretically and numerically investigated in a self-consistent manner. A radiation pressure acceleration model for the dynamics of the electron sheets blown out from laser-irradiated ultrathin foils is developed and verified by PIC simulations. The first multidimensional and integral demonstration of the scheme by 2D PIC simulations is presented. It is found that the reflected pulse undergoes Doppler-upshift by a factor 4?z2, where ?z = (1- vz2/c2)-1/2 is the effective Lorentz factor of the electron sheet al ong its normal direction. Meanwhile the pulse electric field is intensified by a factor depending on the electron density of the sheet in its moving frame ne/?, where ? is the full Lorentz factor.

A hydride generation flow system for determination of arsenic and selenium by total reflection X-ray fluorescence spectrometry

In this work, a preconcentration and separation system based on continuous flow hydride generation is proposed to improve the determination of As and Se by total reflection X-ray fluorescence spectrometry. The generated hydrides are continuously separated from the liquid phase and collected in a chamber containing 250 mul of HCI/HNO3 1:1 (v/v) solution. Hydride generation conditions and collection of the hydrides were evaluated. Under optimised conditions, enrichment factors of 55 for As and 82 for Se were attained. Detection limits of 0.3 mug l(-1) for As and Se were obtained when 20 ml of sample was used. Analysis of a natural water standard reference material from National Institute of Standard and Technology (SRM-1640) was in agreement with the certified values at the 95% confidence level. (C) 2004 Elsevier B.V. All rights reserved.

Monte Carlo simulation applied in total reflection X-ray fluorescence: Preliminary results

The X-ray Fluorescence (XRF) analysis is a technique for the qualitative and quantitative determination of chemical constituents in a sample. This method is based on detection of the characteristic radiation intensities emitted by the elements of the sample, when properly excited. A variant of this technique is the Total Reflection X-ray Fluorescence (TXRF) that utilizes electromagnetic radiation as excitation source. In total reflection of X-ray, the angle of refraction of the incident beam tends to zero and the refracted beam is tangent to the sample support interface. Thus, there is a minimum angle of incidence at which no refracted beam exists and all incident radiation undergoes total reflection. In this study, we evaluated the influence of the energy variation of the beam of incident x-rays, using the MCNPX code (Monte Carlo NParticle) based on Monte Carlo method. © 2013 AIP Publishing LLC.

A study of evaporated aluminum films by X-ray total reflection,

Contract no. AF 18(600)-300. File no. R-355-20-1.

X-Ray Studies On The Bilayer Structure Of Trypsin-Treated Rat-Brain Myelin

Trypsin-treated rat brain myelin was subjected to biochemical and X-ray studies. Untreated myelin gave rise to a pattern of three rings with a fundamental repeat period of 155 Angstrom consisting of two bilayers per repeat period, whereas myelin treated with trypsin showed a fundamental repeat period of 75 Angstrom with one bilayer per repeat period. The integrated raw intensity of the h=4 reflection with respect to the h=2 reflection is 0.38 for untreated myelin. The corresponding value reduced to 0.23, 0.18, 0.17 for myelin treated with 5, 10, 40 units of trypsin per mg of myelin, respectively, for 30 min at 30 degrees C. The decrease in relative raw intensity of the higher-order reflection relative to the lower-order reflection is suggestive of a disordering of the phosphate groups upon trypsin treatment or an increased mosaicity of the membrane or a combination of both these effects, However, trypsin treatment does not lead to a complete breakdown of the membrane, The integrated intensity of the h=1 reflection, though weak, is above the measurable threshold for untreated myelin, whereas the corresponding intensity is below the measurable threshold for trypsin-treated myelin, indicating a possible asymmetric to symmetric transition of the myelin bilayer structure about its centre after trypsin treatment.

Synthesis and x-ray crystal structure of a CuII-theophylline complex: [Cu(theo)2 (H2O)3]·2H2O

The complex [Cu-II (theo)(2)(H2O)(3)].2H(2)O (theo = theophylline) was obtained from aqueous solution. The crystals belong to the monoclinic system, space group P2(1)/n, and are reflection twins about the (001) face. The structure was solved using data from a twinned crystal and refined to final R and R(W) values of 0.069 and 0.064, respectively. Copper has a square-pyramidal coordination with two thee molecules coordinating through N(7) at equatorial positions. The remaining sites are occupied by water molecules. O(6) of one of the thee molecules is at the other axial site at a longer distance of 3.18 Angstrom. This could lead to an alternate (4+1+1) octahedral coordination geometry for Cu-II. The packing is stabilized by stacking interactions between the theophylline moieties at an average separation of 3.46 Angstrom.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures

An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

DETERMINATION OF SURFACE-ROUGHNESS OF INP (001) WAFERS BY X-RAY-SCATTERING

The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.