Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections
Data(s) |
1996
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Resumo |
We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Hao MS; Wang YT; Shao CL; Soga TS; Liang JW; Jimbo T; Umeno M .Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1996,35(12A):6017-6018 |
Palavras-Chave | #半导体物理 #lattice constant #misorientation #X-ray reflection #GaAs/Si epilayer #SI |
Tipo |
期刊论文 |