Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction


Autoria(s): Pan Z; Wang YT; Zhuang Y; Lin YW; Zhou ZQ; Li LH; Wu RH; Wang QM
Data(s)

1999

Resumo

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

Identificador

http://ir.semi.ac.cn/handle/172111/12872

http://www.irgrid.ac.cn/handle/1471x/65406

Idioma(s)

英语

Fonte

Pan Z; Wang YT; Zhuang Y; Lin YW; Zhou ZQ; Li LH; Wu RH; Wang QM .Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction ,APPLIED PHYSICS LETTERS,1999,75(2):223-225

Palavras-Chave #半导体物理 #MOLECULAR-BEAM EPITAXY #GAASN ALLOYS #GROWTH #ENERGY
Tipo

期刊论文