Ecology, population genetics and conservation of the African violet

The ongoing rapid fragmentation of tropical forests is a major threat to global biodiversity. This is because many of the tropical forests are so-called biodiversity 'hotspots', areas that host exceptional species richness and concentrations of endemic species. Forest fragmentation has negative ecological and genetic consequences for plant survival. Proposed reasons for plant species' loss in forest fragments are, e.g., abiotic edge effects, altered species interactions, increased genetic drift, and inbreeding depression. To be able to conserve plants in forest fragments, the ecological and genetic processes that threaten the species have to be understood. That is possible only after obtaining adequate information on their biology, including taxonomy, life history, reproduction, and spatial and genetic structure of the populations. In this research, I focused on the African violet (genus Saintpaulia), a little-studied conservation flagship from the Eastern Arc Mountains and Coastal Forests hotspot of Tanzania and Kenya. The main objective of the research was to increase understanding of the life history, ecology and population genetics of Saintpaulia that is needed for the design of appropriate conservation measures. A further aim was to provide population-level insights into the difficult taxonomy of Saintpaulia. Ecological field work was conducted in a relatively little fragmented protected forest in the Amani Nature Reserve in the East Usambara Mountains, in northeastern Tanzania, complemented by population genetic laboratory work and ecological experiments in Helsinki, Finland. All components of the research were conducted with Saintpaulia ionantha ssp. grotei, which forms a taxonomically controversial population complex in the study area. My results suggest that Saintpaulia has good reproductive performance in forests with low disturbance levels in the East Usambara Mountains. Another important finding was that seed production depends on sufficient pollinator service. The availability of pollinators should thus be considered in the in situ management of threatened populations. Dynamic population stage structures were observed suggesting that the studied populations are demographically viable. High mortality of seedlings and juveniles was observed during the dry season but this was compensated by ample recruitment of new seedlings after the rainy season. Reduced tree canopy closure and substrate quality are likely to exacerbate seedling and juvenile mortality, and, therefore, forest fragmentation and disturbance are serious threats to the regeneration of Saintpaulia. Restoration of sufficient shade to enhance seedling establishment is an important conservation measure in populations located in disturbed habitats. Long-term demographic monitoring, which enables the forecasting of a population s future, is also recommended in disturbed habitats. High genetic diversities were observed in the populations, which suggest that they possess the variation that is needed for evolutionary responses in a changing environment. Thus, genetic management of the studied populations does not seem necessary as long as the habitats remain favourable for Saintpaulia. The observed high levels of inbreeding in some of the populations, and the reduced fitness of the inbred progeny compared to the outbred progeny, as revealed by the hand-pollination experiment, indicate that inbreeding and inbreeding depression are potential mechanisms contributing to the extinction of Saintpaulia populations. The relatively weak genetic divergence of the three different morphotypes of Saintpaulia ionantha ssp. grotei lend support to the hypothesis that the populations in the Usambara/lowlands region represent a segregating metapopulation (or metapopulations), where subpopulations are adapting to their particular environments. The partial genetic and phenological integrity, and the distinct trailing habit of the morphotype 'grotei' would, however, justify its placement in a taxonomic rank of its own, perhaps in a subspecific rank.

Hydrogen bonding in thiolbenzoic acid. Infra-red, ultra-violet, n.m.r. and cryoscopic studies

Dimerization of thiolbenzoic acid has been studied by infra-red, ultra-violet and n.m.r. spectroscopy and cryoscopy. The results indicate that the tendency to form S - H. O hydrogen bonds is not appreciable.

Ultra-violet bands of mercury iodide

The ultraviolet bands of mercury iodide have been excited in uncondensed discharge and photographed with a quartz Littrow spectrograph. The bands in the region λ 2658 to 2530 Å have been analysed into two systems which may form the two components of a2Π-2∑ electronic transition with a2Π interval equal to 858·9 cm-1. These systems and the systems in the region λ 3095 to 2647 Å have the same lower state.

Cartas enviadas por Violet Alford a Justo Garate en 1935

2 cartas (manuscritas) ; entre 192x199mm y 202x254mm. Ubicación: Caja 1 - Carpeta 21

Synthesis, spectroscopic and thermal properties of nickel (II)-azo complexes with blue-violet light wavelength

A novel azo dye containing isoxazole ring and beta-diketone derivative (TIAD) and its two nickel (II) complexes (Ni (II)-ETIAD and Ni (II)-HTIAD) were synthesized in order to obtain a blue-violet light absorption and better thermal stability as a promising organic storage material for next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that uses a high numerical aperture of 0.85 at 405 nm wavelength. Their structures were confirmed on the basis of elemental analysis, MS, FT-IR, UV-Vis and magnetic data. Their solubility in 2,2,3,3-tetrafluoro-1-propanol (TFP) and absorption properties of thin film were measured. The difference of absorption maximum from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. (C) 2004 Elsevier Ltd. All rights reserved.

Simultaneous three-photon-excited violet upconversion luminescence of Ce3+: Lu2Si2O7 single crystals by femtosecond laser irradiation

We found that Ce3+:Lu2Si2O7 single crystals could be excited at 800 nm by using a femtosecond Ti:sapphire laser. The emission spectra of Ce3+:Lu2Si2O7 crystals were the same for one-photon excitation at 267 nm as for excitation at 800 nm. The emission intensity of Ce3+: Lu2Si2O7 crystals was found to depend on the cube of the laser power at 800 nm, consistent with simultaneous absorption of three 800 nm photons. The measured value of the three-photon absorption cross section is sigma'(3) = 2.44 x 10(-77) cm(6) s(2). (c) 2006 Optical Society of America.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplifled procedure direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 ran under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm(2). The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.

Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect

Electroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail.

GaN-based violet laser diodes grown on free-standing GaN substrate

National Natural Science Foundation of China 60506001 60776047 60476021 60576003 60836003；National Basic Research Programme of China 2007CB936700

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode.

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

High-performance violet light-emitting diodes (LEDs) with InGaN/AlInGaN multiple quantum well (MQW) active regions were grown by metal organic chemical vapor deposition (MOCVD). The interface flatness of the InGaN/AlInGaN MQWs and the emission efficiency of the LED are firstly improved with increasing Al content in the AlInGaN barrier layer, and then degraded as Al content increases further, being optimal when Al content is 0.12. Similarly, the result is optimized if the indium content is approximately 2.5% in the AlInGaN barrier layer. The mechanisms which have influences on the radiative efficiency when the Al content increases are discussed. A high output power of 7.3 mW for the violet LED at 20 mA current has been achieved. (c) 2006 Elsevier B.V. All rights reserved.