GaN-based violet laser diodes grown on free-standing GaN substrate


Autoria(s): Zhang LQ; Zhang SM; Jiang DS; Wang H; Zhu JJ; Zhao DG; Liu ZS; Yang H
Data(s)

2009

Resumo

National Natural Science Foundation of China 60506001 60776047 60476021 60576003 60836003;National Basic Research Programme of China 2007CB936700

Identificador

http://ir.semi.ac.cn/handle/172111/10215

http://www.irgrid.ac.cn/handle/1471x/64307

Idioma(s)

英语

Fonte

Zhang LQ, Zhang SM, Jiang DS, Wang H, Zhu JJ, Zhao DG, Liu ZS, Yang H.GaN-based violet laser diodes grown on free-standing GaN substrate.CHINESE PHYSICS B,2009,18(12):5350-5353

Palavras-Chave #光电子学 #GaN laser diode #mounting configuration #active region temperature #CONTINUOUS-WAVE OPERATION
Tipo

期刊论文