GaN-based violet laser diodes grown on free-standing GaN substrate
Data(s) |
2009
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Resumo |
National Natural Science Foundation of China 60506001 60776047 60476021 60576003 60836003;National Basic Research Programme of China 2007CB936700 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang LQ, Zhang SM, Jiang DS, Wang H, Zhu JJ, Zhao DG, Liu ZS, Yang H.GaN-based violet laser diodes grown on free-standing GaN substrate.CHINESE PHYSICS B,2009,18(12):5350-5353 |
Palavras-Chave | #光电子学 #GaN laser diode #mounting configuration #active region temperature #CONTINUOUS-WAVE OPERATION |
Tipo |
期刊论文 |