Characteristics of InGaN multiple quantum well blue-violet laser diodes
| Data(s) |
2006
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|---|---|
| Resumo |
Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) .Characteristics of InGaN multiple quantum well blue-violet laser diodes ,SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2006,49(6):727-732 |
| Palavras-Chave | #光电子学 #metalorganic chemical vapor deposition (MOCVD) #GaN-hased laser diodes #multiple quantum well #ridge waveguide #threshold current #ELECTRICAL-PROPERTIES #GAN SUBSTRATE #CONTACTS |
| Tipo |
期刊论文 |
