Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

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Made available in DSpace on 2010-05-24T07:16:26Z (GMT). No. of bitstreams: 1 Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (MD5) Previous issue date: 2010

National Natural Science Fund of China 60976045 60506001 60836003 60776047 National Basic Research Program of China 2007CB936700

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National Natural Science Fund of China 60976045 60506001 60836003 60776047 National Basic Research Program of China 2007CB936700