Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature

The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from Si Nx films synthesized by plasma-assisted radio frequency magnetron sputtering on Si O2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650 °C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800 to 1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si-O and Si-N bonds in the Si Nx films. Therefore, sufficient oxidation and moderate nitridation of Si Nx Si O2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si-N bonds in thinner Si Nx films, which eventually results in a lower PL intensity.

Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux

The removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900 degrees C. The second method is the deposition of metallic gallium followed by redesorption. A significant decrease in oxygen was achieved by thermal desorption at 900 degrees C under UHV conditions. By applying a subsequent Ga deposition/redesorption, a further reduction in oxygen could be achieved. We examine the merits of an alternative oxide desorption method via conversion of the stable SiO(2) surface oxide into a volatile Ca(2)O oxide by a supply of Ga metals. Furthermore, ultra thin films of pure silicon nitride buffer layer were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma followed by GaN growth. The SIMS depth profile shows that the oxygen impurity can be reduced at GaN/beta-Si(3)N(4)/Si interfaces by applying a subsequent Ga deposition/redesorption. (C) 2011 Elsevier B.V. All rights reserved.

Optical, electrical and dielectric properties of TiO(2)-SiO(2) films prepared by a cost effective sol-gel process

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

SiO(2) in density functional theory and beyond

We present the first-principle electronic structure calculation on an amorphous material including many-body corrections within the GW approximation. We show that the inclusion of the local field effects in the exchange-correlation potential is crucial to quantitatively describe amorphous systems and defect states. We show that the mobility gap of amorphous silica coincides with the band gap of quartz, contrary to the traditional picture and the densityfunctional theory results. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Superparamagnetic Ni:SiO(2)-C nanocomposites films synthesized by a polymeric precursor method

In this work, we report on the magnetic properties of nickel nanoparticles (NP) in a SiO(2)-C thin film matrix, prepared by a polymeric precursor method, with Ni content x in the 0-10 wt% range. Microstructural analyses of the films showed that the Ni NP are homogenously distributed in the SiO(2)-C matrix and have spherical shape with average diameter of similar to 10 nm. The magnetic properties reveal features of superparamagnetism with blocking temperatures T (B) similar to 10 K. The average diameter of the Ni NP, estimated from magnetization measurements, was found to be similar to 4 nm for the x = 3 wt% Ni sample, in excellent agreement with X-ray diffraction data. M versus H hysteresis loops indicated that the Ni NP are free from a surrounding oxide layer. We have also observed that coercivity (H (C)) develops appreciably below T (B), and follows the H (C) ae [1 - (T/T (B))(0.5)] relationship, a feature expected for randomly oriented and non-interacting nanoparticles. The extrapolation of H (C) to 0 K indicates that coercivity decreases with increasing x, suggesting that dipolar interactions may be relevant in films with x > 3 wt% Ni.

Co catalysts supported on SiO(2) and gamma-Al(2)O(3) applied to ethanol steam reforming: Effect of the solvent used in the catalyst preparation method

Cobalt catalysts were prepared on supports of SiO(2) and gamma-Al(2)O(3) by the impregnation method, using a solution of Co precursor in methanol. The samples were characterized by XRD, TPR, and Raman spectroscopy and tested in ethanol steam reforming. According to the XRD results, impregnation with the methanolic solution led to smaller metal crystallites than with aqueous solution, on the SiO(2) support. On gamma-Al(2)O(3), all the samples exhibited small crystallites, with either solvent, due to a higher Co-support interaction that inhibits the reduction of Co species. The TPR results were consistent with XRD results and the samples supported on gamma-Al(2)O(3) showed a lower degree of reduction. In the steam reforming of ethanol, catalysts supported on SiO(2) and prepared with the methanolic solution showed the best H(2), CO(2) and CO selectivity. Those supported on gamma-Al(2)O(3) showed lower H(2) selectivity. (C) 2011 Elsevier Ltd. All rights reserved.

Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application

70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.

Broadband NIR Emission in Sol-Gel Er(3+)-Activated SiO(2)-Ta(2)O(5) Glass Ceramic Planar and Channel Waveguides for Optical Application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Adsorption of silanes bearing nitrogenated Lewis bases on SiO 2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.

Glass-ceramic material from the SiO 2-Al 2O 3-CaO system using sugar-cane bagasse ash (SCBA)

Brazil is the world's largest producer of alcohol and sugar from sugarcane. Currently, sugarcane bagasse is burned in boilers to produce steam and electrical energy, producing a huge volume of ash. The major component of the ash is SiO 2, and among the minor components there are some mineralizing agents or fluxing. Published works have shown the potential of transforming silicate-based residues into glass-ceramic products of great utility. This work reports the research results of SCBA use to produce glass-ceramics with wollastonite, rankinite and gehlenite as the major phases. These silicates have important applications as building industry materials, principally wollastonite, due to their special properties: high resistance to weathering, zero water absorption, and hardness among others. The glasses (frits) were prepared mixing ash, calcium carbonate and sodium or potassium carbonates as flux agents, in different concentrations. X-ray fluorescence was used to determine the chemical composition of the glasses and their crystallization was assessed by using thermal analysis (DTA/DSC/TGA) and X-ray diffraction. The crystallization kinetics was evaluated using the Kissinger method, giving activation energies ranging from 200 to 600 kJ/mol. © 2011 Ceramic Society of Japan.

Broadband NIR emission in novel sol-gel Er3+-doped SiO 2-Nb2O5 glass ceramic planar waveguides for photonic applications

This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb 2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices. © 2012 Elsevier B.V. All rights reserved.

Molekulardynamik-Simulation zur Struktur von SiO 2-Oberflächen mit adsorbiertem Wasser

In der vorliegenden Arbeit werdenMolekulardynamik-Simulationen zur Untersuchung derstatischen Eigenschaften von amorphenSiliziumdioxidoberflächen (Siliziumdioxid) durchgeführt. Da das von van Beest, Kramer und van Santen vorgeschlagene,sogenannte BKS-Potential für Bulksysteme optimiert wurde und an Oberflächen deutlichandere Ladungsverteilungenauftreten als im Bulk, ist die Anwendbarkeit diesesPotentials für Oberflächensystemefraglich. Aus diesem Grund haben wir untersucht, inwieweitsich die Oberflächeneigenschaften von Systemen, die mit Hilfe des BKS-Potentials äquilibriertwurden, durch ein Nachrelaxieren mit einer ab-initio-Simulation (Car-Parrinello-Methode)ändern. Mit Hilfe der Kombination aus BKS- und Car-Parrinello-Methode (CPMD)konnten wir feststellen, daß sich die Systeme aufgrund des Nachrelaxierens in z-Richtungweiter ausdehnen. Desweiteren zeigte sich insbesondere bei kleinen Ringen (kommen nur ander Oberfläche vor), daß es deutliche Abweichungen in den Geometrien (Atomabstände,Winkel usw.) zwischen der reinen BKS- und der kombinierten BKS-CPMD-Methode gibt. Anhand vonCPMD-Simulationen konnten wir zeigen, daß es durch die Wechselwirkung eines Wassermolekülsmit einem 2er-Ring zum Aufbrechen dieser Ringstruktur und zur Bildung von zweiSilanolgruppen (SiOH) kommt. Desweiteren stellten wir fest, daß es sich hierbei um eineexotherme Reaktion (Energiedifferenz 1.6 eV) handelt, für die eineEnergiebarriere von 1.1 eV überwunden werden muß. Ferner ergab sich, daß die an der Bildung des2er-Ringes beteiligten, stark deformierten Tetraeder nach dem Aufbrechen dieserRingstruktur eine nahezu ideale Tetraederform annehmen.

Molekulardynamik-Computersimulation einer amorph-kristallinen SiO 2 Grenzschicht

In dieser Arbeit werden Molekulardynamik-Computersimulationen zur Untersuchung der statischen und dynamischen Eigenschaften einer amorph/kristallinen Siliziumdioxid(SiO2)-Grenzschicht durchgefuehrt.Die Grenzflaeche wird von der [100]-Ebene des beta-Kristobalit-Kristalls und der fluessigen SiO2-Phase gebildet und in einem Temperaturbereich zwischen 2900K und 3100K im Zustand eines metastabilen Gleichgewichts untersucht. Als Modellpotential zur Beschreibung der mikroskopischen Wechselwirkungen zwischen den Teilchen wird ein einfaches Paarpotential aus der Literatur verwendet, das sowohl die Struktur der kristallinen Phase als auch die der fluessigen Phase gut reproduziert. Bezogen auf die Dichte und die potentielle Energie der Teilchen erstreckt sich der Uebergang von der fluessigen in die kristalline Phase ueber 3-5 Atomlagen. Ein Layering-Effekt der Dichte in der fluessigen Phase in der Naehe der Grenzschicht wird nicht beobachtet. Der Einfluss der Grenzschicht auf statische Groessen, welche das System auf einer mittelreichweitigen Laengenskala beschreiben (z. B. Koordinationszahlverteilung und Ringverteilung) reicht im Vergleich dazu weiter in die fluessige Phase hinein und manifestiert sich in Defektstrukturen, wie z. B. der Erhoehung der Wahrscheinlichkeit fuer das Auftreten von 5-fach koordiniertem Silizium und der vermehrten Bildung von 2er-Ringen in der Fluessigkeit. Dies beguenstigt das Aufbrechen und Umklappen von Si-O-Bindungen und fuehrt zu einer Beschleunigung der Dynamik und einer Erhoehung der Diffusionsgeschwindigkeit in der Fluessigkeit. Im weiteren wird die Hochfrequenzdynamik der reinen SiO2-Fluessigkeit untersucht. Dazu berechnen wir die vibratorische Zustandsdichte in harmonischer Naeherung aus der inhaerenten Struktur. Wir finden einen stark ausgepraegten Peak bei einer Frequenz von 0.6 THz. Dieser Peak kann der niederenergetischsten transversalen akustischen Mode zugeordnet werden, die auch als Scherschwingung des Systems direkt sichtbar ist.