Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application


Autoria(s): Goncalves, R. R.; Carturan, G.; Zampedri, L.; Ferrari, M.; Montagna, M.; Chiasera, A.; Righini, G. C.; Pelli, S.; Ribeiro, SJL; Messaddeq, Younes
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/07/2002

Resumo

70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.

Formato

28-30

Identificador

http://dx.doi.org/10.1063/1.1489477

Applied Physics Letters. Melville: Amer Inst Physics, v. 81, n. 1, p. 28-30, 2002.

0003-6951

http://hdl.handle.net/11449/36986

10.1063/1.1489477

WOS:000176426000010

WOS000176426000010.pdf

Idioma(s)

eng

Publicador

American Institute of Physics (AIP)

Relação

Applied Physics Letters

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article