Unraveling effects of disorder on the electronic structure of SiO(2) from first principles


Autoria(s): MARTIN-SAMOS, Layla; BUSSI, Giovanni; RUINI, Alice; MOLINARI, Elisa; Caldas, Marilia Junqueira
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2010

Resumo

We present a first-principles systematic study of the electronic structure of SiO(2) including the crystalline polymorphs alpha quartz and beta cristobalite, and different types of disorder leading to the amorphous phase. We start from calculations within density functional theory and proceed to more sophisticated quasiparticle calculations according to the GW scheme. Our results show that different origins of disorder have also different impact on atomic and electronic-density fluctuations, which affect the electronic structure and, in particular, the size of the mobility gap in each case.

RTN EU[HPRN-CT-2002-00317]

FIRB-MIUR Italy-Canada[RBIN06JB4C]

FAPESP

CNPq

Identificador

PHYSICAL REVIEW B, v.81, n.8, 2010

1098-0121

http://producao.usp.br/handle/BDPI/16222

10.1103/PhysRevB.81.081202

http://dx.doi.org/10.1103/PhysRevB.81.081202

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #OPTICAL-PROPERTIES #AMORPHOUS SILICA #RANDOM LATTICES #BAND-GAP #SEMICONDUCTORS #MODEL #GLASS #APPROXIMATION #ABSORPTION #Physics, Condensed Matter
Tipo

article

original article

publishedVersion