Unraveling effects of disorder on the electronic structure of SiO(2) from first principles
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
18/04/2012
18/04/2012
2010
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Resumo |
We present a first-principles systematic study of the electronic structure of SiO(2) including the crystalline polymorphs alpha quartz and beta cristobalite, and different types of disorder leading to the amorphous phase. We start from calculations within density functional theory and proceed to more sophisticated quasiparticle calculations according to the GW scheme. Our results show that different origins of disorder have also different impact on atomic and electronic-density fluctuations, which affect the electronic structure and, in particular, the size of the mobility gap in each case. RTN EU[HPRN-CT-2002-00317] FIRB-MIUR Italy-Canada[RBIN06JB4C] FAPESP CNPq |
Identificador |
PHYSICAL REVIEW B, v.81, n.8, 2010 1098-0121 http://producao.usp.br/handle/BDPI/16222 10.1103/PhysRevB.81.081202 |
Idioma(s) |
eng |
Publicador |
AMER PHYSICAL SOC |
Relação |
Physical Review B |
Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
Palavras-Chave | #OPTICAL-PROPERTIES #AMORPHOUS SILICA #RANDOM LATTICES #BAND-GAP #SEMICONDUCTORS #MODEL #GLASS #APPROXIMATION #ABSORPTION #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |