SiO(2) in density functional theory and beyond


Autoria(s): MARTIN-SAMOS, L; BUSSI, G; RUINI, A; MOLINARI, E; Caldas, Marilia Junqueira
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

20/10/2012

20/10/2012

2011

Resumo

We present the first-principle electronic structure calculation on an amorphous material including many-body corrections within the GW approximation. We show that the inclusion of the local field effects in the exchange-correlation potential is crucial to quantitatively describe amorphous systems and defect states. We show that the mobility gap of amorphous silica coincides with the band gap of quartz, contrary to the traditional picture and the densityfunctional theory results. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Identificador

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, n.5, p.1061-1066, 2011

0370-1972

http://producao.usp.br/handle/BDPI/29318

10.1002/pssb.201046283

http://dx.doi.org/10.1002/pssb.201046283

Idioma(s)

eng

Publicador

WILEY-BLACKWELL

Relação

Physica Status Solidi B-basic Solid State Physics

Direitos

restrictedAccess

Copyright WILEY-BLACKWELL

Palavras-Chave #amorphous solids #defects #electronic structure #GW approximation #silica #ELECTRONIC-STRUCTURE #SELF-ENERGIES #MOBILITY GAP #BAND-GAPS #SEMICONDUCTORS #EXCHANGE #MODEL #APPROXIMATION #INSULATORS #CRYSTALS #Physics, Condensed Matter
Tipo

article

original article

publishedVersion