SiO(2) in density functional theory and beyond
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2011
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Resumo |
We present the first-principle electronic structure calculation on an amorphous material including many-body corrections within the GW approximation. We show that the inclusion of the local field effects in the exchange-correlation potential is crucial to quantitatively describe amorphous systems and defect states. We show that the mobility gap of amorphous silica coincides with the band gap of quartz, contrary to the traditional picture and the densityfunctional theory results. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
Identificador |
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, n.5, p.1061-1066, 2011 0370-1972 http://producao.usp.br/handle/BDPI/29318 10.1002/pssb.201046283 |
Idioma(s) |
eng |
Publicador |
WILEY-BLACKWELL |
Relação |
Physica Status Solidi B-basic Solid State Physics |
Direitos |
restrictedAccess Copyright WILEY-BLACKWELL |
Palavras-Chave | #amorphous solids #defects #electronic structure #GW approximation #silica #ELECTRONIC-STRUCTURE #SELF-ENERGIES #MOBILITY GAP #BAND-GAPS #SEMICONDUCTORS #EXCHANGE #MODEL #APPROXIMATION #INSULATORS #CRYSTALS #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |