Add/drop filters based on SiC technology for optical interconnects

In this paper we demonstrate an add/drop filter based on SiC technology. Tailoring of the channel bandwidth and wavelength is experimentally demonstrated. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible range. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si: H)-n heterostructure. Several monochromatic pulsed lights, separately or in a polychromatic mixture illuminated the device. Independent tuning of each channel is performed by steady state violet bias superimposed either from the front and back sides. Results show that, front background enhances the light-to-dark sensitivity of the long and medium wavelength channels and quench strongly the others. Back violet background has the opposite behaviour. This nonlinearity provides the possibility for selective removal or addition of wavelengths. An optoelectronic model is presented and explains the light filtering properties of the add/drop filter, under different optical bias conditions.

Error control on spectral data of four-wave mixing based on a-SiC technology

In this paper we exploit the nonlinear property of the SiC multilayer devices to design an optical processor for error detection that enables reliable delivery of spectral data of four-wave mixing over unreliable communication channels. The SiC optical processor is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Visible pulsed signals are transmitted together at different bit sequences. The combined optical signal is analyzed. Data show that the background acts as selector that picks one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as EXOR and three bit addition are demonstrated optically, showing that when one or all of the inputs are present, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed using four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all-optical processor for error detection and then provide an experimental demonstration of this idea. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical processor based on a-SiC technology for spectral data error control

The SiC optical processor for error detection and correction is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Data shows that the background act as selector that pick one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as exclusive OR (EXOR) and three bit addition are demonstrated optically with a combination of such switching devices, showing that when one or all of the inputs are present the output will be amplified, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed by use of the four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all optical processor for error detection and correction and then, provide an experimental demonstration of this fault tolerant reversible system, in emerging nanotechnology.

Catalytic gates for gas sensors based on SiC technology

En este trabajo se presenta un estudio químico y estructural de las capas metálicas de Pt y TaSix utilizadas como puerta catalítica en sensores de gas de alta temperatura basados en dispositivos MOS de SiC. Para ello se han depositado capas de diferentes espesores sobre substratos de Si. Los resultados muestran que con la reducción del espesor de Pt y con un recocido se consigue aumentar la rugosidad de las capas de puerta, lo que debería aumentar la sensibilidad y la velocidad de respuesta de los dispositivos que las incorporasen. Otro efecto del recocido es la transformación química del material de la puerta que, para capas delgadas de Pt con TaSix, produce la transformación total Pt en Pt2Ta, lo que podría afectar a las características catalíticas de la puerta. Los primeros resultados eléctricos indican que, a pesar de que las capas de Pt empleadas son gruesas y compactas, los diodos MOS túnel de SiC son sensibles a los gases CO y NO2, aunque presentan una velocidad de respuesta bastante lenta.

Cybernetics and electronic computor [sic] technology,

Translation of: Kibernetika i elektro-vychislitel'nai︠a︡ tekhnika (romanized form)

Development of a High-Efficiency Inverter with SiC Technology for Photovoltaic Applications

I convertitori elettronici di potenza sono da anni largamente diffusi sul mercato, poiché necessari per pilotare motori elettrici a velocità variabile in ambito industriale e a interfacciare alla rete elettrica i generatori da fonti di energia rinnovabili, in particolare eolica e fotovoltaica. In tutti i casi è richiesto che i convertitori siano efficienti, ovvero che l’energia persa durante la conversione sia minima. Considerando che il cuore di un convertitore è costituito da interruttori statici, è fondamentale una stima accurata dell’efficienza di questi ultimi per definire le prestazioni di un convertitore. Il materiale più diffuso per la realizzazione di questi componenti è il silicio (Si), ma esistono oggi altri semiconduttori che permettono prestazioni migliori, quali il carburo di silicio (SiC) e il nitruro di gallio (GaN). A causa del loro elevato costo di produzione rispetto ai componenti tradizionali, è divenuto sempre più importante stimare l’efficienza dei convertitori che montano queste tecnologie innovative, per trovare una giustificazione al loro impiego. In questa tesi, in particolare, l’efficienza di un convertitore con tecnologia SiC è stata prima calcolata analiticamente e poi testata a banco. Infine, è proposta un’architettura per un inverter trifase che possa essere impiegata per un’applicazione fotovoltaica. Questo lavoro è parte delle attività assegnate a Raw Power S.r.l. nell’ambito del progetto Europeo YesVGaN, il cui scopo ultimo entro i prossimi anni, è la realizzazione di componenti GaN commercialmente appetibili, che necessiteranno di essere testati e confrontati con i dispositivi al silicio e al carburo di silicio.

Logic functions based on optical bias controlled SIC Tandem devices

The purpose of this paper is the design of an optoelectronic circuit based on a-SiC technology, able to act simultaneously as a 4-bit binary encoder or a binary decoder in a 4-to-16 line configurations and show multiplexer-based logical functions. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n multilayered structure produced by PECVD. To analyze it under information-modulated wave (color channels) and uniform irradiation (background) four monochromatic pulsed lights (input channels): red, green, blue and violet shine on the device. Steady state optical bias was superimposed separately from the front and the back sides, and the generated photocurrent was measured. Results show that the devices, under appropriate optical bias, act as reconfigurable active filters that allow optical switching and optoelectronic logic functions development providing the possibility for selective removal of useless wavelengths. The logic functions needed to construct any other complex logic functions are the NOT, and both or either an AND or an OR. Any other complex logic function that might be found can also be used as building blocks to achieve the functions needed for the retrieval of channels within the WDM communication link. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Light memory function in a double pin SiC device

A double pi'npin heterostructure based on amorphous SiC has a non linear spectral gain which is a function of the signal wavelength that impinges on its front or back surface. An impulse of a configurable length and amplitude is applied to a 390 nm LED which illuminates one of the sensor surfaces, followed by a time period without any illumination after which an input signal with a different wavelength is impinged upon the front surface. Results show that the intensity and duration of the impulse illumination of the surfaces influences the sensor's response with different output for the same input signal. This paper studies this effect and proposes an application as a short term light memory. (C) 2015 Elsevier B.V. All rights reserved.

Five channel WDM communication using a single a:SiC-H double pin photo device

Amorphous SiC heterostructures built as a double pin device has a non linear spectral gain which is a function of the signal wavelength that impinges on its front or back surface. Illuminating the device with several single wavelength data channels in the visible spectrum allows for Wavelength Division Multiplexing (WDM) digital communication. Using fixed ultra-violet illumination at the front or back surfaces enables the recovery of the multiplexed channels. Five channels, each using a single wavelength which is modulated by a Manchester coded signal at 12,000 bps, form a frame with 1024 bits with a preamble for signal intensity and synchronisation purposes. Results show that the clustering of the received signal enables the successful recovery of the five channel data using the front and back illumination of the surfaces of the double pin photo device. (C) 2015 Elsevier B.V. All rights reserved.

Power converters in WBG device technology for automotive applications and characterization setups for GaN power transistors

This PhD dissertation envisages the design of innovative power converters exploiting WBG devices to get state-of-the-art performance in products intended for industrial applications of automotive field. The collaborations with different specialized companies, provided the opportunity to access commercially-available state-of-the-art SiC and GaN technologies and the possibility to realize innovative converter prototypes. Concerning SiC technology, the complete design of a $350kW$ Battery Emulator instrument in collaboration with a company leader in the automotive testing sector, was carried out from scratch exploiting state-of-the-art SiC power-modules, planar magnetics and top-notch MCU technologies. Discrete high-voltage GaN switches were exploited in the Power Supplies design for automotive charger application to target improved performances compared to the market state-of-the-art. Specifically, two high-efficiency prototypes, an AC/DC converter and a DC/DC converter of $7.5kW$, have been realized for this purpose. To further investigate the characteristics of state-of-the-art GaN power devices two measurement set-ups have been designed. In particular, the trapping phenomenon causing the collapse of drain current during ON-state with a consequent degradation of ON-resistance has been analyzed.

Piikarbidipuolijohdekomponentit tehoelektroniikassa

Piikarbidi (SiC) on tunnettu korkealuokkaisena hioma-aineena ja hiekkapaperin pin-noitteena yli 100 vuoden ajan. Nykyisin ainetta käytetään pääasiassa puolijohteiden raaka-aineena. Piikarbidi on puolijohteena ylivoimainen tavanomaiseen piihin (Si) verrattuna lähes joka suhteessa johtuen sen kiderakenteesta, mutta sen valmistus on osoittautunut erittäin monimutkaiseksi johtuen pääasiassa vaikeudesta kasvattaa riittävän suuria ja laadukkaita SiC-kiteitä. Siksi tehoelektroniikan SiC-puolijohdekomponenttien laajamittaista käyttöä joudutaan yhä odottamaan. Tässä diplomityössä tehdään perusteellinen selvitys, miten piikarbidin valmistuspro-sessit eroavat normaaleista piin valmistusprosesseista, mitä etuja piikarbidin käytöllä saavutetaan ja vastaavasti mitä varjopuolia sillä on. Työssä selvitetään tällä hetkellä markkinoilla olevien SiC-tehopuolijohdekomponenttien ominaisuuksia, ketkä ovat teh-neet tutkimusta alalla, sekä esitetään arvioita SiC-tekniikan tulevaisuuden näkymistä.

Use of a-SiC:H Semiconductor-Based Transducer for Glucose Sensing through FRET Analysis

Glucose sensing is an issue with great interest in medical and biological applications. One possible approach to glucose detection takes advantage of measuring changes in fluorescence resonance energy transfer (FRET) between a fluorescent donor and an acceptor within a protein which undergoes glucose-induced changes in conformation. This demands the detection of fluorescent signals in the visible spectrum. In this paper we analyzed the emission spectrum obtained from fluorescent labels attached to a protein which changes its conformation in the presence of glucose using a commercial spectrofluorometer. Different glucose nanosensors were used to measure the output spectra with fluorescent signals located at the cyan and yellow bands of the spectrum. A new device is presented based on multilayered a-SiC:H heterostructures to detect identical transient visible signals. The transducer consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure optimized for the detection of the fluorescence resonance energy transfer between fluorophores with excitation in the violet (400 nm) and emissions in the cyan (470 nm) and yellow (588 nm) range of the spectrum. Results show that the device photocurrent signal measured under reverse bias and using appropriate steady state optical bias, allows the separate detection of the cyan and yellow fluorescence signals presented.

Optoelectronic Logic Functions Based on Reconfigurable SiC Multilayer Devices

WDM multilayered SiC/Si devices based on a-Si:H and a-SiC:H filter design are approached from a reconfigurable point of view. Results show that the devices, under appropriated optical bias, act as reconfigurable active filters that allow optical switching and optoelectronic logic functions development. Under front violet irradiation the magnitude of the red and green channels are amplified and the blue and violet reduced. Violet back irradiation cuts the red channel, slightly influences the magnitude of the green and blue ones and strongly amplifies de violet channel. This nonlinearity provides the possibility for selective removal of useless wavelengths. Particular attention is given to the amplification coefficient weights, which allow taking into account the wavelength background effects when a band needs to be filtered from a wider range of mixed signals, or when optical active filter gates are used to select and filter input signals to specific output ports in WDM communication systems. A truth table of an encoder that performs 8-to-1 multiplexer (MUX) function is presented.

Presença das novas tecnologias nos noticiários da SIC: vantagens e problemas da virtualidade nas notícias

Relatório de estágio apresentado à Escola Superior de Comunicação Social como parte dos requisitos para obtenção de grau de mestre em Jornalismo.