Pt/TiO2 nanotubes/SiC schottky diodes for hydrogen gas sensing applications


Autoria(s): Shafiei, Mahnaz; Sadek, Abu Z.; Yu, Jerry; Arsat, Rashidah; Latham , Kay; Kalantar-zadeh, Kourosh; Wlodarski, Wojtek
Data(s)

2010

Resumo

Titanium oxide nanotubes Schottky diodes were fabricated for hydrogen gas sensing applications. The TiO2 nanotubes were synthesized via anodization of RF sputtered titanium films on SiC substrates. Two anodization potentials of 5 V and 20 V were used. Scanning electron microscopy of the synthesized films revealed nanotubes with avarage diameters of 20 nm and 75 nm. X-ray diffraction analysis revealed that the composition of the oxide varied with the anodization potential. TiO2 (anatase) being formed preferentially at 5 V and TiO (no anatase) at 20 V. Current-voltage characteristics of the diodes were studied towards hydrogen at temperatures from 25°C to 250°C. At constant current bias of −500 μA and 250°C, the lateral voltage shifts of 800 mV and 520 mV were recorded towards 1% hydrogen for the 5 V and 20 V anodized nanotubes, respectively.

Formato

application/pdf

Identificador

http://eprints.qut.edu.au/59564/

Publicador

Institute of Electrical and Electronics Engineers

Relação

http://eprints.qut.edu.au/59564/1/ICONN2010-Full_Manuscript-Mahnaz_Shafiei.pdf

DOI:10.1109/ICONN.2010.6045175

Shafiei, Mahnaz, Sadek, Abu Z., Yu, Jerry, Arsat, Rashidah, Latham , Kay, Kalantar-zadeh, Kourosh, & Wlodarski, Wojtek (2010) Pt/TiO2 nanotubes/SiC schottky diodes for hydrogen gas sensing applications. In Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN), 2010, Institute of Electrical and Electronics Engineers, Sydney, Australia, pp. 58-61.

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Copyright 2010 IEEE.

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Palavras-Chave #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation #TiO2 nanotubes #Schottky diode #hydrogen #gas sensor #reverse bias
Tipo

Conference Paper