Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices
Data(s) |
01/09/2008
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Resumo |
This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapour-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The current-voltage characteristics have been analysed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed. |
Formato |
application/pdf |
Identificador | |
Publicador |
International Journal on Smart Sensing and Intelligent Systems |
Relação |
http://eprints.qut.edu.au/59536/1/SmartSensing%26IntellegenSystems_M_Shafiei_2008.pdf http://www.s2is.org/Issues/v1/n3/papers/paper12.pdf Shafiei, M., Kalantar-zadeh, K., Wlodarski, W., Comini, E., Ferroni, M., Sberveglieri, G., Kaciulis, S., & Pandolfi, L. (2008) Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices. International Journal on Smart Sensing and Intelligent Systems, 1(3), pp. 771-783. |
Direitos |
Copyrighyt 2008 International Journal on Smart Sensing and Intelligent Systems |
Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation #Gas sensor #Hydrogen #Nanowires #SnO2 #MOS #Schottky #XPS #TEM #SEM |
Tipo |
Journal Article |