Pt/ZnO/SiC thin film for hydrogen gas sensing
Contribuinte(s) |
Al-Sarawi, Said Fares Varadan, Vijay K. Weste, Neil Kalantar-Zadeh, Kourosh |
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Data(s) |
2008
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Resumo |
Zinc oxide (ZnO) is one of the most promising electronic and photonic materials to date. In this work, we present an enhanced ZnO Schottky gas sensor deposited on SiC substrates in comparison to those reported previously in literature. The performance of ZnO/SiC based Schottky thin film gas sensors produced a forward lateral voltage shift of 12.99mV and 111.87mV in response to concentrations of hydrogen gas at 0.06% and 1% in air at optimum temperature of 330 ºC. The maximum change in barrier height was calculated as 37.9 meV for 1% H2 sensing operation at the optimum temperature. |
Identificador | |
Publicador |
SPIE |
Relação |
DOI:10.1117/12.810586 Yu, Jerry C.W., Shafiei, Mahnaz, Ling, Christopher, Wlodarski, Wojtek B., & Kalantar-Zadeh, Kourosh (2008) Pt/ZnO/SiC thin film for hydrogen gas sensing. In Al-Sarawi, Said Fares, Varadan, Vijay K., Weste, Neil, & Kalantar-Zadeh, Kourosh (Eds.) Smart Structures, Devices, and Systems IV, SPIE, Melbourne, VIC, 72680L-72680L. |
Fonte |
Science & Engineering Faculty |
Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation #ZnO #Schottky #gas sensing #hydrogen #thin film |
Tipo |
Conference Paper |