Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.

A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement

A new method to extract MOSFET's threshold voltage VT by measurement of the gate-to-substrate capacitance C-gb of the transistor is presented. Unlike existing extraction methods based on I-V data, the measurement of C-gb does not require de drain current to now between drain and source thus eliminating the effects of source and drain series resistance R-S/D, and at the same time, retains a symmetrical potential profile across the channel. Experimental and simulation results on devices with different sizes are presented to justify the proposed method.

A MOSFET-only wideband LNA exploiting thermal noise canceling and gain optimization

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores

A tunable triode-MOSFET transconductor and its application to g(m)-C filters

A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order linear relationship between g(m) and a de bias voltage is achieved. In addition to easy tuning, this technique offers circuit simplicity, wide dynamic range, high input and output impedances and low consumption. The transconductor is presented on both single-ended and fully-differential versions. A 3rd-order elliptical low-pass g(m)-C filter with a nominal roll-off frequency of 2MHz is used as one example for the many applications of the proposed transconductor. SPICE data describe circuits performances and filter tunabilily Passband is tuned at a rate of 2.36KHz/mV and good linearity is indicated by a 0.89% THD for an 800mV(p-p) balanced-driven input.

On designing OTA-C graphic-equalizers with MOSFET-triode transconductors

A CMOS audio-equalizer based on a parallel-array of 2nd-order bandpass-sections is presented and realized with triode transconductors. It has a programmable 12db-boost/cut on each of its three decade-bands, easily achieved through the linear dependence of gm on VDS. In accordance with a 0.8μm n-well double-metal fabrication process, a range of simulations supports theoretical analysis and circuit performance at different boost/cut scenarios. For VDD=3.3V, fullboosting stand-by prover consumption is 1.05mW. THD=-42.61dB@1Vpp and may be improved by balanced structures. Thermal- and I/f-noise spectral densities are 3.2μV/Hz12 and 18.2μV/Hz12@20Hz, respectively, for a dynamic range of 52.3dB@1Vpp. The equalizer effective area is 2.4mm2. The drawback of the existing transmission-zero due to the feedthrough-capacitance of a triode input-device is also addressed. The proposed topology can be extended to the design of more complex graphic-equalizers and hearing-aids.

A low-voltage triode-MOSFET four-quadrant multiplier with optimized current-efficiency

A low-voltage, low-power four-quadrant analog multiplier with optimized current-efficiency is presented. Its core corresponds to a pseudodifferential cascode, gain-boosting triode-transconductor. According to a low-voltage 1.2μm CMOS n-well process, operand differential-amplitudes are 1.0Vpp and 0.32Vpp for a 1.3V-supply. Common-mode voltages are properly chosen to maximize current-efficiency to 58%. Total quiescent dissipation is 260μW. A range of PSPICE simulation supports theoretical analysis. Excellent linearity is observed on dc characteristic. Assuming a ±0.5% mismatch on (W/L) and VTH THD at full-scale is 0.93% and 1.42%, for output frequencies of 1MHz and 10MHz, respectively.

Setup sperimentale per l'analisi di rumore in dispositivi MOSFET di potenza

Progettazione dell'amplificatore, allestimento del banco di misure e misurazione del rumore di drain nei MOSFET di potenza

Misure di rumore flicker e affidabilita nei dispositivi mosfet di potenza

L'attività di tesi consiste sia nella calibrazione di un banco di misura per analisi di rumore a basse frequenze nei dispositivi MOSFET di potenza, sia nella valutazione dei relativi e successivi dati sperimentali (con particolare attenzione anche ai processi di stress e recupero applicati ai dispositivi).

AN IMPLANTABLE MOSFET DOSIMETER MODIFIED TO ACT AS A FIDUCIAL MARKER

In external beam radiation therapy, it is imperative that the prescribed dose is administered to the correct location and in the correct amount. Though several ex vivo methods of quality assurance are currently employed to achieve this goal, verifying that the correct dose is received within the patient in situ is impossible without the capability of measuring dose inside the patient. Recently, a method of measuring dose delivered within the patient has been developed, an implantable MOSFET dosimeter. This dosimeter is implanted within the patient and records the dose received. Since the dosimeter is implanted in the patient, it could serve a dual function as a fiducial marker for image guided radiation therapy (IGRT) treatment if it could be modified to be visible on x-rays. In this study, modifications to the MOSFET dosimeter were made to increase its visibility for IGRT treatment. To test whether the modifications hindered the dosimeter’s ability to accurately measure and transmit dose information, the energy dependence, angular dependence and wireless read range of the modified dosimeter were measured and compared to unmodified dosimeters. It was found that the modified dosimeter performed as well as the unmodified dosimeter while also being suitable for use as a fiducial marker for IGRT treatment.

Topics in MOSFET network design /

Thesis--University of Illinois at Urbana-Champaign.