The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells

(1 1 (2) over bar 0) GaN/InGaN multiple quantum wells (MQWs) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. The excitation-intensity-dependent photoluminescence (PL) spectrum of these samples was measured, and no peak shift was observed. This phenomenon was attributed to the absence of piezoelectric field (PEF) along the growth orientation of the (1 1 (2) over bar 0) face MQWs. Our experimental results showed that PEF was the main reason causing peak blueshift in excitation-intensity-dependent PL spectrum of (0 0 0 1) InGaN/GaN NIQWs. It was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid PEF and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Inhomogeneous broadening, luminescence origin and optical amplification in bismuth-doped glass

Absorption and luminescence spectra and optical amplification in bismuth-doped germanate silicate glass were investigated. Two kinds of bismuth ion valence states could exist in the glass. One is Bi2+, which has shown red luminescence, another might be Bi+, which is the active center for infrared luminescence. The infrared luminescence excited at 700, 800, and 980 nm should be ascribed to the electronic transition P-3(1) --> P-3(0) of Bi+ ions in three distinct sites. The shifting, broadening, and multiple configuration of the luminescence could be due to the randomly disorder of local environment and multiple sites of the active centers. In this glass, obvious optical amplification was realized at 1300 nm wavelength when excited at 808 and 980 nm, respectively.

Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.

Spectroscopie de luminescence à température et pression variables pour des complexes des lanthanides et de l'or

Ce travail est axé vers la compréhension détaillée des propriétés de luminescence de composés de certains métaux lourds. La première partie de ce mémoire décrit la caractérisation spectroscopique d'un radical de type nitronyle nitroxyde, 2-(2-pyridinyl)-4,4,5,5-tétraméthyl-4,5-dihydro-1H-imidazolyl-1-oxyl-3-oxyde, abrégé (NIT2-Py), et de ses complexes avec les cations Tb(III), [Tb(hfac)3NIT2-Py], et Y(III), [Y(hfac)3NIT2-Py]. La variation de la température affecte les spectres de luminescence qui montrent de la structure vibronique résolue. Les maxima de ces transitions vibroniques se rapprochent au fur et à mesure que la température augmente. Ces variations des maxima en fonction de la température ne correspondent pas à des variations de fréquences vibrationnelles et sont de l'ordre de 200 cm-1 entre 80 K et 240 K. La variation de la température n'a pas d'influence significative sur la structure moléculaire, comme atteste la variation mineure des maxima des spectres Raman entre 80 K et 300 K. La comparaison des spectres expérimentaux à des spectres calculés montre que ces variations peuvent être reproduites par l'utilisation d'une combinaison de fréquences vibrationnelles. Le paramètre dont la variation est très significative est la résolution du spectre de luminescence, représentée par la largeur à mi-hauteur des transitions vibroniques qui forment le spectre de luminescence. La deuxième partie de ce mémoire décrit les propriétés de luminescence d'une série de complexes d’or(I). Elles sont comparées aux changements structuraux à pression et température variable. Les interactions aurophiles ont une grande influence sur la luminescence. La variation de la température et de la pression est une approche efficace pour varier la luminescence. Les effets observés dans les spectres d'émission de ces complexes dépendent des changements de structure induits par variation de la température et de la pression. Ces petites variations structurales mènent à des changements importants, à titre d'exemple à un déplacement du maximum de la bande de luminescence de 60 cm-1/ kbar vers les faibles énergies pour un des complexes de l'or(I) étudiés au cours de ce projet.

Visible luminescence mechanism in nano ZnO under weak confinement regime

We describe the structure of luminescence spectrum in the visible region in nano-ZnO in colloidal and thin film forms under weak confinement regime by modeling the transition from excited state energy levels of excitons to their ground state. Measurements on nanocrystallites indicate the presence of luminescence due to excitonic emissions when excited with 255 nm. The relevant energy levels showing the transitions corresponding to the observed peaks in the emission spectrum of ZnO of particle size 18 nm are identified.

Cr^4＋：YAG被动调QNd：YAG陶瓷激光器的研究

介绍了近几年迅速发展的一种新型激光介质——透明Nd：YAG多晶陶瓷的发展状况，对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm，端面抽运Nd：YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90％的Cr^4＋：YAG可饱和吸收晶体，被动调Q的阈值功率为119mW，当端面抽运功率为465mW时，获得波长为1064nm，脉宽为16ns，重复频率为18．18kHz，单脉冲能量为3．4μJ，平均输出功率为61mW的稳定调Q

Yb：YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940hm的近红外光激发时，Yb：YAG晶体有明显的上转换蓝色发光。实验发现498nm的蓝色发光强度与激发功率的平方成正比，而且Yb^3＋掺杂浓度越高，蓝色发光越强。分析表明这是Yb^3＋间强的相互作用导致的合作发光，是由于Yb^3＋在共价性的YAG基质中，它的4f^I3电子易于与近邻离子发生相互作用导致的。

A study on strong room temperature photoluminescence of a-SiNx : H films

Photoluminescence measurements have been performed in Si-rich a-SiNx:H (x less than or equal to 1.3) alloys prepared by glow discharge. It is observed that the blue shift of the peak of room temperature luminescence spectrum with increasing N content parallels increasing intensity. Two distinct luminescence mechanisms are proposed in a-SiNx:H with the threshold near x = 0.8. For low x, the samples show typical luminescence properties of a-Si:H, while for high x, the normalized luminescence bands are independent of temperature. Combining percolation theory, the luminescence origins are discussed on the basis of Brodsky's quantum well model. (C) 2000 Elsevier Science B.V. All rights reserved.

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

The phase transitions of hetero atoms substituted molecular sieves Me-VPI-5(Me=Mg, Ti, Sn, Si) and their influence on spectra structures of Eu(III) ion

The hetero atom substituted aluminophosphate molecular sieves Me-VPI-5(Me = Mgt Ti, Sn, Si) were synthesized hydrothermally. Rare earth ions are originally doped into these microporous materials by aqueous solution ion exchange procedures. The phase transitions of the microporous materials are investigated by high-temperature and high-pressure experimental techniques. The influence of the phase transitions on the rare earth ions' spectral structures is discussed, With the increase of temperature, Eu(II)Mg-VPI-5 is converted into Eu(II)Mg-AIPO(4)-8, then into tridymite phase. The pressure has a notable influence on Eu(II) ion's spectral structures. The spectral structures have changed regularly with the increase of pressure.

Desenvolvimento de um novo complexo macrocíclico do sistema cobalto cyclam

In this work were synthesized and studied the spectroscopic and electrochemical characteristics of the coordination compounds trans-[Co (cyclam)Cl2]Cl, trans- Na[Co(cyclam)(tios)2], trans-[Co(en)2Cl2]Cl and trans-Na[Co(en)2(tios)2], where tios = thiosulfate and en = ethylenediamine. The compounds were characterized by: Elemental Analysis (CHN), Absorption Spectroscopy in the Infrared (IR), Uv-Visible Absorption Spectroscopy, Luminescence Spectroscopy and Electrochemistry (cyclic voltammetry). Elemental Analysis (CHN) suggests the following structures for the complex: trans- [Co(cyclam)Cl2]Cl.6H2O and trans-Na[Co(cyclam)(tios)2].7H2O. The electrochemical analysis, when compared the cathodic potential (Ec) processes of the complexes trans- [Co(cyclam)Cl2]Cl and trans-[Co(en)2Cl2]Cl, indicated a more negative value (-655 mV) for the second complex, suggesting a greater electron donation to the metal center in this complex which can be attributed to a greater proximity of the nitrogen atoms of ethylenediamine in relation to metal-nitrogen cyclam. Due to the effect of setting macrocyclic ring to the metal center, the metal-nitrogen bound in the cyclam are not as close as the ethylenediamine, this fact became these two ligands different. Similar behavior is also observed for complexes in which the chlorides are replaced by thiosulfate ligand, trans-Na[Co(en)2(tios)2] (-640 mV) and trans-Na[Co(cyclam)(tios)2] (-376 mV). In absorption spectroscopy in the UV-visible, there is the band of charge transfer LMCT (ligand p d* the metal) in the trans-Na[Co(cyclam)(tios)2] (350 nm, p tios  d* Co3+) and in the trans-Na[Co(en)2(tios)2] (333 nm, p tios d* Co3+), that present higher wavelength compared to complex precursor trans- [Co(cyclam)Cl2]Cl (318 nm, pCl  d* Co3+), indicating a facility of electron density transfer for the metal in the complex with the thiosulfate ligand. The infrared analysis showed the coordination of the thiosulfate ligand to the metal by bands in the region (620-635 cm-1), features that prove the monodentate coordination via the sulfur atom. The νN-H bands of the complexes with ethylenediamine are (3283 and 3267 cm-1) and the complex with cyclam bands are (3213 and 3133 cm-1). The luminescence spectrum of the trans-Na[Co(cyclam)(tios)2] present charge transfer band at 397 nm and bands dd at 438, 450, 467, 481 and 492 nm.

Optical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2

Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.

Temperature Sensing Using Colloidal-Core Photonic Crystal Fiber

We report on a temperature sensor based on the monitoring of the luminescence spectrum of CdSe/ZnS nanocrystals, dispersed in mineral oil and inserted into the core of a photonic crystal fiber. The high overlap between the pump light and the nanocrystals as well as the luminescence guiding provided by the fiber geometry resulted in relatively high luminescence powers and improved optical signal-to-noise ratio (OSNR). Also, both core end interfaces were sealed so as to generate a more stable and robust waveguide structure. Temperature sensitivity experiments indicated a 70 pm/degrees C spectral shift over the 5 degrees C to 90 degrees C range.

Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells

The intermediatebandsolarcell (IBSC) is a photovoltaic device with a theoretical conversion efficiency limit of 63.2%. In recent years many attempts have been made to fabricate an intermediateband material which behaves as the theory states. One characteristic feature of an IBSC is its luminescence spectrum. In this work the temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra of InAs/GaAs QD-IBSCs together with their reference cell have been studied. It is shown that EL measurements provide more reliable information about the behaviour of the IB material inside the IBSC structure than PL measurements. At low temperatures, the EL spectra are consistent with the quasi-Fermi level splits described by the IBSC model, whereas at room temperature they are not. This result is in agreement with previously reported analysis of the quantum efficiency of the solarcells