Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14T11:15:43Z No. of bitstreams: 0

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14T11:15:43Z No. of bitstreams: 0

Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604904, 2006CB604908) and the National Natural Science Foundation of China (Grant Nos. 60676029, 60990315, 60625402).

国内

Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604904, 2006CB604908) and the National Natural Science Foundation of China (Grant Nos. 60676029, 60990315, 60625402).