γ-LiAIO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积（PLD）技术在（302）γ-LiAIO2衬底上成功生长了非极性的a面（112^-0）γZnO薄膜．衬底温度为350℃时，薄膜是混合取向（a向和C向），以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的（1120）取向，摇摆曲线半高宽O.65^o，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性．衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱（PL）带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1／5

不同沉积参量下ZrO_2薄膜的微结构和激光损伤阈值

ZrO2采用X射线衍射(XRD)技术分析了不同充氧条件和沉积温度对ZrO2溥膜组成结构的影响，并对不同工艺下制备的薄膜的表面粗糙度和激光损伤阈值进行了测量。结果发现随着氧压的升高，ZrO2溥膜将由单斜相多晶态逐渐转变为非晶态结构，而随着基片温度的增加，溥膜将由非晶态逐渐转变为单斜相多晶态。同时发现随着氧压升高晶粒尺寸减小，而随着沉积温度增加，晶粒尺寸增大。氧压增加时工艺对表面粗糙度有一定程度的改善，而沉积温度升高，工艺对表面粗糙度的改善不明显。晶粒尺寸大小变化与表面粗糙度变化存在对应关系。激光损伤测量表明

基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9∶1。运用分光光度计、四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析。计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质。实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值。薄膜的结晶度随着基底温度的提高而提高。

Characterization of LaF3 coatings prepared at different temperatures and rates

LaF3 thin films were prepared by thermal boat evaporation at different substrate temperatures and various deposition rates. X-ray diffraction (XRD), Lambda 900 spectrophotometer and X-ray photoelectron spectroscopy (XPS) were employed to study crystal structure, transmittance and chemical composition of the coatings, respectively. Laser-induce damage threshold (LIDT) was determined by a tripled Nd:YAG laser system with a pulse width of 8 ns. It is found that the crystal structure became more perfect and the refractive index increased gradually with the temperature rising. The LIDT was comparatively high at high temperature. In the other hand, the crystallization status also became better and the refractive index increased when the deposition rate enhanced at a low level. If the rate was super rapid, the crystallization worsened instead and the refractive index would lessen greatly. On the whole, the LIDT decreased with increasing rate. (C) 2007 Elsevier B.V. All rights reserved.

Produção de plantas e metabólitos de Cleome dendroides Schult. & Schult. f. (Cleomaceae) utilizando diferentes sistemas de cultivo in vitro

Cleome dendroides é uma espécie endêmica da Mata Atlântica dos estados do Rio de Janeiro e Espírito Santo, bioma alterado por intensa atividade antrópica, o que constitui uma ameaça à preservação de suas populações. Não existem estudos dos pontos de vista fisiológico, biotecnológico, fitoquímico ou farmacológico sobre a espécie. Considerando-se o perfil fitoquímico e o potencial medicinal do gênero, torna-se relevante definirem-se protocolos para a produção de plantas e metabólitos de C. dendroides utilizando diferentes sistemas de cultivo in vitro. No presente trabalho, foram realizados estudos sobre a germinação in vivo da espécie, avaliando-se a influência do substrato, temperatura e luz. Não se observou qualquer tipo de dormência, sendo as temperaturas de 20, 25 e 20-30C, em areia ou vermiculita, apropriadas para a germinação in vivo. Definiu-se também uma metodologia eficiente de germinação sob condições in vitro, e as plântulas obtidas foram utilizadas como fonte de explantes para os estudos de propagação in vitro. A resposta morfogênica foi avaliada considerando-se a origem e tipo do explante, tipos e concentrações de reguladores de crescimento e número de subculturas. A metodologia empregada mostrou-se eficiente para a produção de brotos e manutenção de estoques de plantas in vitro que serviram como fonte de explantes. A melhor condição para a propagação in vitro foi definida em meio solidificado contendo BA, independentemente do tipo de explante e da origem. Os brotos obtidos foram alongados, enraizados e aclimatizados. Também foi estabelecida a cultura de raízes e a regeneração de brotos a partir destas culturas. Avaliou-se o efeito da origem do explante, assim como dos tipos e concentrações de fitorreguladores sobre a proliferação de raízes e a regeneração de brotos. O fitorregulador AIB propiciou maior multiplicação das raízes, enquanto BA mostrou-se eficiente na regeneração de brotos a partir das raízes recém-formadas. Foi estabelecido ainda um protocolo de cultura de calos e de suspensões celulares. Avaliou-se o efeito da origem e do tipo de explante, dos tipos e das concentrações de fitorreguladores sobre a calogênese. A combinação de PIC com KIN foi a mais eficiente para a indução de calos em explantes de plântulas obtidas a partir de germinação in vitro, produzindo calos que foram mantidos por pelo menos dois anos. As suspensões celulares também foram estabelecidas em meio contendo PIC + KIN, mantendo uma produção de biomassa de cerca de cinco vezes o peso fresco inicial por três sucessivas subculturas. Análises histoquímicas e fitoquímicas revelaram a presença de alcaloides nos calos e nas suspensões celulares. Foram realizadas análises fitoquímicas de plantas de campo, plantas aclimatizadas, plantas mantidas em estoque in vitro e culturas de raízes, as quais indicaram a presença de derivados de glicosinolatos. Os resultados demonstraram a viabilidade de produção de material vegetal de C. dendroides por meio de métodos biotecnológicos e a produção in vitro de metabólitos de importância medicinal

Ink-jet printing for patterning engineering surfaces

This work explored the use of industrial drop-on-demand inkjet printing for masking steel surfaces on engineering components, followed by chemical etching, to produce patterned surfaces. A solvent-based ink was printed on to mild steel samples and the influences of substrate topography and substrate temperature were investigated. Contact angle measurements were used to assess wettability. Regular patterns of circular spots (∼60 /on diameter) and more complex mask patterns were printed. Variation of the substrate temperature had negligible effect on the final size of the printed drops or on the resolution achieved. Colored optical interference fringes were observed on the dried ink deposits and correlated with film thickness measurements by whitelight interferometry.

Deposition of carbon nanotubes on CMOS

We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.

Growth parameter dependence of magnetic property of CrAs thin film

This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser

The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V/III ratio, growth rates, doping levels and interface control are summarized. Double crystal Xray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (C) 2005 Elsevier B.V. All rights reserved.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.