Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser
Data(s) |
2005
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Resumo |
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V/III ratio, growth rates, doping levels and interface control are summarized. Double crystal Xray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (C) 2005 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Guo, Y; Liu, FQ; Liu, JQ; Li, CM; Wang, ZG .Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser ,MATERIALS LETTERS,SEP 2005,59 (22):2755-2758 |
Palavras-Chave | #半导体材料 #heteroepitaxial structure |
Tipo |
期刊论文 |